N Channel MOSFET HUASHUO HSCB2016 Featuring High Cell Density Trench Technology and Low Gate Charge
Key Attributes
Model Number:
HSCB2016
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
910pF
Pd - Power Dissipation:
18W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
HSCB2016
Package:
DFN-6L(2x2)
Product Description
Product Overview
The HSCB2016 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.Product Attributes
- Brand: HS Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCB2016 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 4.5V | 16 | A | |||
| Pulsed Drain Current (IDM) | 64 | A | ||||
| Total Power Dissipation (PD@TC=25) | 18 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 100 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.018 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=4.5V , ID=16A | 9 | 12 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=12A | 11.5 | 14 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 0.9 | V | |
| VGS(th) Temperature Coefficient (VGS(th)) | -3.1 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=16A | 10 | S | |||
| Total Gate Charge (Qg) (4.5V) | VDS=10V , VGS=4.5V , ID=16A | 12 | nC | |||
| Gate-Source Charge (Qgs) | 2.3 | |||||
| Gate-Drain Charge (Qgd) | 1 | |||||
| Turn-On Delay Time (Td(on)) | VDS=10V , VGS=4.5V , RG=6 , ID=16A | 10 | ns | |||
| Rise Time (Tr) | 11 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 35 | ns | ||||
| Fall Time (Tf) | 31 | ns | ||||
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | 910 | pF | |||
| Output Capacitance (Coss) | 230 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 100 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 16 | A | |||
| Pulsed Source Current (ISM) | 64 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2410121434_HUASHUO-HSCB2016_C2828493.pdf
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