Low gate charge and high cell density MOSFET HUASHUO HSU4903 ideal for synchronous buck converter designs
Key Attributes
Model Number:
HSU4903
Product Custom Attributes
Configuration:
Common Source
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,23A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
593pF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
5.5nC@4.5V
Mfr. Part #:
HSU4903
Package:
TO-252-4
Product Description
Product Overview
The HSU4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSU4903 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS and Green Product compliant
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent Cdv/dt effect decline
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU4903 (N-Ch) | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 40 | V | ||
| BVDSS Temperature Coefficient | Reference to 25, ID=1mA | 0.034 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=12A | 30 | m | |||
| VGS=4.5V, ID=10A | 50 | m | ||||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 1.0 | 1.5 | 2.5 | V | |
| VGS(th) Temperature Coefficient | -4.56 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=32V, VGS=0V, TJ=25 | 1 | uA | |||
| VDS=32V, VGS=0V, TJ=55 | 5 | uA | ||||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=12A | 8 | S | |||
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | 2.6 | 5.2 | |||
| Total Gate Charge (Qg) | VDS=20V, VGS=4.5V, ID=12A | 5.5 | nC | |||
| Gate-Source Charge (Qgs) | 1.25 | nC | ||||
| Gate-Drain Charge (Qgd) | 2.5 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=20V, VGS=10V, RG=3.3, ID=1A | 8.9 | ns | |||
| Rise Time (Tr) | 2.2 | ns | ||||
| HSU4903 (P-Ch) | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -40 | V | ||
| BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.012 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V, ID=-8A | 45 | m | |||
| VGS=-4.5V, ID=-4A | 70 | m | ||||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -1.0 | -1.6 | -2.5 | V | |
| VGS(th) Temperature Coefficient | 4.32 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=-32V, VGS=0V, TJ=25 | 1 | uA | |||
| VDS=-32V, VGS=0V, TJ=55 | 5 | uA | ||||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=-5V, ID=-8A | 12.6 | S | |||
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | 13 | 16 | |||
| Total Gate Charge (Qg) | VDS=-20V, VGS=-4.5V, ID=-12A | 9 | nC | |||
| Gate-Source Charge (Qgs) | 2.54 | nC | ||||
| Gate-Drain Charge (Qgd) | 3.1 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 19.2 | ns | |||
| Rise Time (Tr) | 12.8 | ns | ||||
| Absolute Maximum Ratings | ||||||
| N-Ch | Drain-Source Voltage (VDS) | 40 | V | |||
| P-Ch | Drain-Source Voltage (VDS) | -40 | V | |||
| N-Ch / P-Ch | Gate-Source Voltage (VGS) | 20 | V | |||
| N-Ch | Continuous Drain Current (ID@TC=25) | VGS @ 10V | 23 | A | ||
| P-Ch | Continuous Drain Current (ID@TC=25) | VGS @ 10V | -20 | A | ||
| N-Ch | Continuous Drain Current (ID@TC=100) | VGS @ 10V | 18 | A | ||
| P-Ch | Continuous Drain Current (ID@TC=100) | VGS @ 10V | -16 | A | ||
| N-Ch | Pulsed Drain Current (IDM) | 46 | A | |||
| P-Ch | Pulsed Drain Current (IDM) | -40 | A | |||
| N-Ch | Single Pulse Avalanche Energy (EAS) | 28 | mJ | |||
| P-Ch | Single Pulse Avalanche Energy (EAS) | 66 | mJ | |||
| N-Ch | Avalanche Current (IAS) | 17.8 | A | |||
| P-Ch | Avalanche Current (IAS) | -27.2 | A | |||
| N-Ch | Total Power Dissipation (PD@TC=25) | 25 | W | |||
| P-Ch | Total Power Dissipation (PD@TC=25) | 31.3 | W | |||
| Thermal Data | ||||||
| N-Ch / P-Ch | Storage Temperature Range (TSTG) | -55 | 150 | |||
| N-Ch / P-Ch | Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 5 | /W | ||||
2410121525_HUASHUO-HSU4903_C508801.pdf
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