7A 650V N channel MOSFET Hangzhou Silan Microelectronics SVF7N65CMJ TO251J package for power conversion
Key Attributes
Model Number:
SVF7N65CMJ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
98pF
Input Capacitance(Ciss):
789pF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
SVF7N65CMJ
Package:
TO-251-3
Product Description
Product Overview
The SVF7N65CF/D/MJ/MJL/K/T is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior withstand capability against high energy pulses in avalanche and commutation modes. It is widely employed in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou Silan Microelectronics Co., Ltd.
- Certifications: Halogen free
Technical Specifications
| Part Number | Package | 7A, 650V, RDS(on)(typ.) | Drain-Source Breakdown Voltage (BVDSS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Power Dissipation (PD) @ TC=25C | Thermal Resistance (RJC) | Thermal Resistance (RJA) |
| SVF7N65CF | TO-220F-3L | 1.1@VGS=10V | 650V | 30V | 7.0A | 46W | 2.7C/W | 62.5C/W |
| SVF7N65CD | TO-252-2L | 1.1@VGS=10V | 650V | 30V | 7.0A | 89W | 1.4C/W | 62.0C/W |
| SVF7N65CMJ | TO-251J-3L | 1.1@VGS=10V | 650V | 30V | 7.0A | 90W | 1.39C/W | 62.0C/W |
| SVF7N65CMJL | TO-251JL-3L | 1.1@VGS=10V | 650V | 30V | 7.0A | 90W | 1.39C/W | 62.0C/W |
| SVF7N65CK | TO-262-3L | 1.1@VGS=10V | 650V | 30V | 7.0A | 120W | 1.04C/W | 62.5C/W |
| SVF7N65CT | TO-220-3L | 1.1@VGS=10V | 650V | 30V | 7.0A | 145W | 0.86C/W | 62.5C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF7N65CMJ_C403825.pdf
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