Plastic Encapsulated Transistor High Diode MMBT2907A for Signal Amplification and Switching Applications
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
Product Overview
The MMBT2907A is a plastic-encapsulated transistor featuring an epitaxial planar die construction. It serves as a complementary NPN type to the MMBT2222A. This device is suitable for various electronic applications requiring signal amplification and switching.
Product Attributes
- Brand: High Diode Semiconductor
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
| VCEO | Collector-Emitter Voltage | -60 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current | -600 | mA | |
| PC | Collector Power Dissipation | 250 | mW | |
| RJA | Thermal Resistance From Junction To Ambient | 500 | /W | |
| Tj | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55+150 | ||
| V(BR)CBO | Collector-base breakdown voltage | -60 | V | IC=-10A,IE=0 |
| V(BR)CEO* | Collector-emitter breakdown voltage | -60 | V | IC=-10mA,IB=0 |
| V(BR)EBO | Emitter-base breakdown voltage | -5 | V | IE=-10A,IC=0 |
| ICBO | Collector cut-off current | -20 | nA | VCB=-50V,IE=0 |
| IEBO | Base cut-off current | -10 | nA | VEB=-3V, IC=0 |
| ICEX | Collector cut-off current | -50 | nA | VCE=-30 V, VBE(off) =-0.5V |
| hFE | DC current gain | 100-300 | VCE=-10V,IC=-150mA | |
| 75 | VCE=-10V,IC=-0.1mA | |||
| 100 | VCE=-10V,IC=-1mA | |||
| 100 | VCE=-10V,IC=-10mA | |||
| 50 | VCE=-10V,IC=-500mA | |||
| VCE(sat)* | Collector-emitter saturation voltage | -0.4 | V | IC=-150mA,IB=-15mA |
| -1.6 | V | IC=-500mA,IB=-50mA | ||
| VBE(sat)* | Base-emitter saturation voltage | -1.3 | V | IC=-150mA,IB=-15mA |
| -2.6 | V | IC=-500mA,IB=-50mA | ||
| fT | Transition frequency | 200 | MHz | VCE=-20V,IC=-50mA,f=100MHz |
| td | Delay time | 10 | ns | |
| tr | Rise time | 25 | ns | VCE=-30V,IC=-150mA,B1=-15mA |
| tS | Storage time | 225 | ns | |
| tf | Fall time | 60 | ns | VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA |
2410121434_High-Diode-MMBT2907A_C466639.pdf
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