Electronic PNP Transistor High Diode MMBT3906 in SOT23 Package with Epitaxial Planar Die Construction
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
Product Overview
The MMBT3906 is a PNP epitaxial planar die construction transistor in a SOT-23 package. It serves as a complementary type to the NPN transistor MMBT3904, offering a high diode semiconductor solution for various electronic applications.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Construction: Epitaxial planar die
- Type: PNP Transistor
- Classification: 2A SOT-23 Plastic-Encapsulate Transistors
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | MAX | UNIT |
| Collector-Base Voltage | V | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -40 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -200 | mA | ||
| Collector Power Dissipation | PC | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55+150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA, IB=0 | -40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -10A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40 V, IE=0 | -100 | nA | |
| Collector cut-off current | ICEX | VCE=-30V, VBE(off)=-3V | -50 | nA | |
| Emitter cut-off current | IEBO | VEB= -5V, IC=0 | -100 | nA | |
| DC current gain | hFE1 | VCE=-1V, IC= -10mA | 100 | 300 | |
| DC current gain | hFE2 | VCE= -1V, IC=-50mA | 60 | ||
| DC current gain | hFE3 | VCE= -1V, IC=-100mA | 30 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-50mA, IB=-5mA | -0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= -50mA, IB=-5mA | -0.95 | V | |
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 300 | MHz | |
| Delay Time | td | VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA | 35 | nS | |
| Rise Time | tr | VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA | 35 | nS | |
| Storage Time | ts | VCC=-3V,IC=-10mA IB1=IB2=-1mA | 225 | nS | |
| Fall Time | tf | VCC=-3V,IC=-10mA IB1=IB2=-1mA | 75 | nS | |
| HFE RANK | 100-300 | ||||
| HFE RANGE | L | 100200 | |||
| HFE RANGE | H | 200300 |
2409272232_High-Diode-MMBT3906_C466523.pdf
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