N Channel MOSFET Hangzhou Silan Microelectronics SVF2N60F Power Transistor for AC DC Power Supply and Motor Control
Key Attributes
Model Number:
SVF2N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
233pF
Output Capacitance(Coss):
32pF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
8.2nC@10V
Mfr. Part #:
SVF2N60F
Package:
TO-220F
Product Description
Silan Microelectronics SVF2N60NF(F) N-CHANNEL MOSFET
The SVF2N60NF(F) is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous substance control: Pb free
Technical Specifications
| Characteristics | Symbol | SVF2N60NF | SVF2N60F | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 600 | 600 | V |
| Gate-Source Voltage | VGS | 30 | V | |
| Drain Current (TC=25C) | ID | 2.0 | A | |
| Drain Current (TC=100C) | ID | 1.3 | A | |
| Drain Current Pulsed | IDM | 8.0 | A | |
| Power Dissipation (TC=25C) | PD | 16 | W | |
| Power Dissipation -Derate above 25C | 0.13 | W/C | ||
| Single Pulsed Avalanche Energy (Note1) | EAS | 115 | mJ | |
| Operation Junction Temperature Range | TJ | -55+150 | C | |
| Storage Temperature Range | Tstg | -55+150 | C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction-to-Case | RJC | 7.81 | 5.56 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 120 | 62.5 | C/W |
| ELECTRICAL CHARACTERISTICS (TC=25C UNLESS OTHERWISE NOTED) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | |
| Drain-Source Leakage Current | IDSS | 1.0 | A | |
| Gate-Source Leakage Current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | 2.0 -- 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(on) | 3.7 -- 4.2 | ||
| Input Capacitance | Ciss | 233 | pF | |
| Output Capacitance | Coss | 32 | pF | |
| Reverse Transfer Capacitance | Crss | 2.8 | pF | |
| Turn-on Delay Time | td(on) | 8.9 | ns | |
| Turn-on Rise Time | tr | 23 | ns | |
| Turn-off Delay Time | td(off) | 23 | ns | |
| Turn-off Fall Time | tf | 25 | ns | |
| Total Gate Charge | Qg | 8.2 | nC | |
| Gate-Source Charge | Qgs | 1.6 | nC | |
| Gate-Drain Charge | Qg d | 4.4 | nC | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Source Current | IS | 2.0 | A | |
| Pulsed Source Current | ISM | 8.0 | A | |
| Diode Forward Voltage | VSD | 1.4 | V | |
| Reverse Recovery Time | Trr | 326 | ns | |
| Reverse Recovery Charge | Qrr | 0.9 | C | |
Ordering Information
| Part No. | Package Type | Marking | Hazardous substance control | Packing Type |
| SVF2N60NF | TO-126F-3L | SVF2N60NF | Pb free | Tube |
| SVF2N60F | TO-220F-3L | SVF2N60F | Pb free | Tube |
2501091110_Hangzhou-Silan-Microelectronics-SVF2N60F_C171705.pdf
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