power MOSFET transistor Hangzhou Silan Microelectronics SVG086R0NT for inverter and UPS power management
Key Attributes
Model Number:
SVG086R0NT
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
520pF
Input Capacitance(Ciss):
3.896nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
SVG086R0NT
Package:
TO-252
Product Description
Product Description
The SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's LVMOS technology. Its advanced process and cell structure are engineered to minimize on-state resistance and deliver superior switching performance. This device is widely applied in UPS and power management for inverter systems.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C (A) | Drain Current (ID) @ TC=100C (A) | RDS(on)(typ.) @ VGS=10V (m) | Power Dissipation (PD) @ TC=25C (W) |
| SVG086R0NT/NS | TO-220-3L / TO-263-2L | 80V | 20V | 120 | 76 | 5.0 | 156 |
| SVG086R0ND | TO-252-2L | 80V | 20V | 100 | 64 | 5.0 | 114 |
| SVG086R0NL5 | PDFN-8-5X6X0.95-1.27 | 80V | 20V | 100 | 64 | 5.0 | 109 |
| Characteristics | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | -- | -- | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=50A | -- | 5.0 | 6.0 | m |
| Input Capacitance | Ciss | f=1MHz, VGS=0V, VDS=40V | -- | 3896 | -- | pF |
| Output Capacitance | Coss | f=1MHz, VGS=0V, VDS=40V | -- | 520 | -- | pF |
| Reverse Transfer Capacitance | Crss | f=1MHz, VGS=0V, VDS=40V | -- | 25 | -- | pF |
| Total Gate Charge | Qg | VDD=64V, VGS=10V, ID=50A | -- | 66 | -- | nC |
| Continuous Source Current | IS | -- | -- | -- | 120 | A |
| Diode Forward Voltage | VSD | IS=50A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=30A, VGS=0V, dIF/dt=100A/s | -- | 47 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=30A, VGS=0V, dIF/dt=100A/s | -- | 0.06 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVG086R0NT_C601644.pdf
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