Low resistance N channel MOSFET Hangzhou Silan Microelectronics SVF12N60CF for power conversion systems
Key Attributes
Model Number:
SVF12N60CF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
RDS(on):
750mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@480V
Pd - Power Dissipation:
51W
Input Capacitance(Ciss):
1.367nF@25V
Gate Charge(Qg):
-
Mfr. Part #:
SVF12N60CF
Package:
TO-220F-3
Product Description
Product Overview
The SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor developed using Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology offers reduced on-state resistance, superior switching performance, and enhanced reliability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Drain Current | ID | TC=25°C | 12 | A | ||
| Drain Current | ID | TC=100°C | 7.6 | A | ||
| Drain Current Pulsed | IDM | 48 | A | |||
| Power Dissipation | PD | TC=25°C | 51 | W | ||
| Power Dissipation Derating | -Derate above 25°C | 0.41 | W/°C | |||
| Single Pulsed Avalanche Energy | EAS | (Note 1) | 798 | mJ | ||
| Operation Junction Temperature Range | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 2.44 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | -- | -- | 1.0 | µA |
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250µA | 2.0 | -- | 4.0 | V |
| Static Drain - Source On State Resistance | RDS(on) | VGS=10V, ID=6.0A | -- | 0.58 | 0.75 | Ω |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 1367 | -- | pF |
| Output Capacitance | Coss | -- | 152 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 14 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=300V,ID=12A, VGS=10V ,RG=24Ω (Note 2,3) | -- | 24 | -- | ns |
| Turn-on Rise Time | tr | -- | 52 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 88 | -- | ns | |
| Turn-off Fall Time | tf | -- | 48 | -- | ns | |
| Total Gate Charge | Qg | VDS=480V, ID=12A, VGS=10V (Note 2,3) | -- | 34 | -- | nC |
| Gate-Source Charge | Qgs | -- | 7.6 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 15 | -- | nC | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current | IS | Integral Reverse p-n Junction Diode in the MOSFET | -- | -- | 12 | A |
| Pulsed Source Current | ISM | -- | -- | 48 | ||
| Diode Forward Voltage | VSD | IS=12A,VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=12A,VGS=0V, dIF/dt=100A/µS (Note 2) | -- | 530 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 4.8 | -- | µC | |
2501091110_Hangzhou-Silan-Microelectronics-SVF12N60CF_C2897708.pdf
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