trenched N channel MOSFET HUASHUO HSBA3016 with 100 percent EAS guaranteed full function reliability
Key Attributes
Model Number:
HSBA3016
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
108A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
69W
Input Capacitance(Ciss):
3.075nF@15V
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
HSBA3016
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, making it suitable for demanding applications.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current (ID) | @TC=25, VGS @ 10V1,6 | 108 | A | ||
| Continuous Drain Current (ID) | @TC=100, VGS @ 10V1,6 | 68 | A | ||
| Continuous Drain Current (ID) | @TA=25, VGS @ 10V1 | 17.3 | 27.3 | A | |
| Continuous Drain Current (ID) | @TA=70, VGS @ 10V1 | 14 | 21.8 | A | |
| Pulsed Drain Current (IDM)2 | 216 | A | |||
| Single Pulse Avalanche Energy (EAS)3 | 144.7 | mJ | |||
| Avalanche Current (IAS) | 53.8 | A | |||
| Total Power Dissipation (PD) | @TC=254 | 69 | W | ||
| Total Power Dissipation (PD) | @TA=254 | 5.2 | W | ||
| Storage Temperature Range (TSTG) | -55 | 175 | |||
| Operating Junction Temperature Range (TJ) | -55 | 175 | |||
| Thermal Resistance Junction-Ambient (RJA)1 | 62 | /W | |||
| Thermal Resistance Junction-Ambient (RJA)1 | (t ≤10s) | 25 | /W | ||
| Thermal Resistance Junction-Case (RJC)1 | 1.8 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | V | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=10V , ID=30A | 4 | mΩ | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=4.5V , ID=15A | 6 | mΩ | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=30A | 26.5 | S | ||
| Total Gate Charge (Qg) | VDS=15V , VGS=4.5V , ID=15A | 31.6 | nC | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 3075 | pF | ||
| Output Capacitance (Coss) | 400 | pF | |||
| Reverse Transfer Capacitance (Crss) | 315 | pF | |||
| Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | 108 | A | ||
| Pulsed Source Current (ISM)2,5 | 216 | A | |||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=1A , TJ=25 | 1 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3016 | PRPAK5*6 | 3000/Tape&Reel |
2410121513_HUASHUO-HSBA3016_C2903565.pdf
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