Power MOSFET Hangzhou Silan Microelectronics SVF2N60RM 600V 2A Low Gate Charge Fast Switching Device
Key Attributes
Model Number:
SVF2N60RM
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3.7Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.7pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
250pF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
8.92nC@10V
Mfr. Part #:
SVF2N60RM
Package:
TO-251
Product Description
Product Overview
The SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free
Technical Specifications
| Part No. | Package | Marking | 2A, 600V, RDS(on)(typ)=3.7@VGS=10V | Low gate charge | Low Crss | Fast switching | Improved dv/dt capability |
| SVF2N60RDTR | TO-252-2L | 2N60RD | Yes | Yes | Yes | Yes | Yes |
| SVF2N60RM | TO-251D-3L | 2N60RM | Yes | Yes | Yes | Yes | Yes |
| SVF2N60RMJ | TO-251J-3L | 2N60RMJ | Yes | Yes | Yes | Yes | Yes |
| Characteristics | Symbol | Rating | Unit | Notes |
| Drain-Source Voltage | VDS | 600 | V | |
| Gate-Source Voltage | VGS | 30 | V | |
| Drain Current (TC=25C) | ID | 2.0 | A | |
| Drain Current (TC=100C) | ID | 1.3 | A | |
| Drain Current Pulsed | IDM | 8.0 | A | |
| Power Dissipation (TC=25C) | PD | 34 | W | |
| Derate above 25C | 0.27 | W/C | ||
| Single Pulsed Avalanche Energy | EAS | 115 | mJ | Note 1 |
| Reverse Diode dv/dt | dv/dt | 4.5 | V/ns | Note 2 |
| MOSFET dv/dt Ruggedness | dv/dt | 50 | V/ns | Note 3 |
| Operation Junction Temperature Range | TJ | -55+150 | C | |
| Storage Temperature Range | Tstg | -55+150 | C |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0VID=250A | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600VVGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDSID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10VID=1.0A | -- | 3.7 | 4.2 | |
| Input Capacitance | Ciss | VDS=25VVGS=0Vf=1.0MHz | -- | 250 | -- | pF |
| Output Capacitance | Coss | -- | 30 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 2.7 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=300VID=2.0ARG=25 (Note4, 5) | -- | 8.0 | -- | ns |
| Turn-on Rise Time | tr | -- | 23 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 17 | -- | ns | |
| Turn-off Fall Time | tf | -- | 24 | -- | ns | |
| Total Gate Charge | Qg | VDS=480VID=2.0AVGS=10V (Note 4, 5) | -- | 8.9 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.5 | -- | ||
| Gate-Drain Charge | Qgd | -- | 4.4 | -- | ||
| Continuous Source Current | IS | -- | -- | 2.0 | A | |
| Pulsed Source Current | ISM | -- | -- | 8.0 | A | |
| Diode Forward Voltage | VSD | IS=2.0A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=2.0A, VGS=0V, dIF/dt=100A/s (Note 4) | -- | 330 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 0.87 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF2N60RM_C601627.pdf
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