Power MOSFET N Channel Hangzhou Silan Microelectronics SVF7N65CF 7A 650V Low RDS on Fast Switching
Key Attributes
Model Number:
SVF7N65CF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
789pF@25V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
SVF7N65CF
Package:
TO-220F-3
Product Description
Product Overview
The SVF7N65CF/D/MJ/MJL/K/T is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and ensure robust high-energy pulse handling in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou, China
- Certifications: Halogen free
Technical Specifications
| Part Number | Package | 7A, 650V, RDS(on)(typ.) | Low Gate Charge | Low Crss | Fast Switching | Improved dv/dt Capability |
| SVF7N65CF | TO-220F-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CD | TO-252-2L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CMJ | TO-251J-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CMJL | TO-251JL-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CK | TO-262-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CT | TO-220-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| Characteristics | Symbol | Ratings | Unit | SVF7N65CF | SVF7N65CD | SVF7N65CMJ/CMJL | SVF7N65CK | SVF7N65CT |
| Drain-Source Voltage | VDS | 650 | V | ✓ | ✓ | ✓ | ✓ | ✓ |
| Gate-Source Voltage | VGS | ±30 | V | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current (TC = 25�b0;C) | ID | 7.0 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current (TC = 100�b0;C) | ID | 4.4 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current Pulsed | IDM | 28 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Power Dissipation (TC=25�b0;C) | PD | 46-145 | W | 46 | 89 | 90 | 120 | 145 |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 435 | mJ | ✓ | ✓ | ✓ | ✓ | ✓ |
| Reverse Diode dv/dt (Note 2) | dv/dt | 4.5 | V/ns | ✓ | ✓ | ✓ | ✓ | ✓ |
| MOSFET dv/dt Ruggedness (Note 3) | dv/dt | 50 | V/ns | ✓ | ✓ | ✓ | ✓ | ✓ |
| Operation Junction Temperature Range | TJ | -55+150 | �b0;C | ✓ | ✓ | ✓ | ✓ | ✓ |
| Storage Temperature Range | Tstg | -55+150 | �b0;C | ✓ | ✓ | ✓ | ✓ | ✓ |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=3.5A | -- | 1.1 | 1.4 | Ω |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 789 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 98 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 9.0 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 15 | -- | ns |
| Turn-on Rise Time | tr | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 32 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 51 | -- | ns |
| Turn-off Fall Time | tf | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 33 | -- | ns |
| Total Gate Charge | Qg | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 21 | -- | nC |
| Gate-Source Charge | Qgs | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 4.5 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 10 | -- | nC |
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 7.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 28.0 | A |
| Diode Forward Voltage | VSD | IS=7.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=7.0A,VGS=0V, dIF/dt=100A/µs (Note 4) | -- | 499 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=7.0A,VGS=0V, dIF/dt=100A/µs (Note 4) | -- | 3.0 | -- | µC |
2501091111_Hangzhou-Silan-Microelectronics-SVF7N65CF_C467751.pdf
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