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quality Darlington Array Power Driver HGSEMI ULN2003AN Integrated Circuit for Solenoid and Relay Applications factory
quality Darlington Array Power Driver HGSEMI ULN2003AN Integrated Circuit for Solenoid and Relay Applications factory

Darlington Array Power Driver HGSEMI ULN2003AN Integrated Circuit for Solenoid and Relay Applications

Key Attributes
Model Number: ULN2003AN
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
ULN2003AN
Package:
DIP-16
Product Description

Product Overview

The ULN2003A is a high-voltage, high-current Darlington array integrated circuit, featuring seven independent silicon NPN Darlington pairs. Each output stage is an open collector and includes a common emitter. Designed for driving inductive loads, it incorporates flyback diodes and appropriate base resistors for each unit. With a high gain and the ability to handle up to 500mA per channel and 50V output voltage, the ULN2003A is compatible with TTL, CMOS, and PMOS logic levels. Its integrated 2.7K base resistors allow direct interfacing with 5V TTL and CMOS circuits, eliminating the need for standard logic buffers. This device is suitable for applications requiring the driving of solenoids, relays, DC motors, incandescent lamps, and LEDs.

Product Attributes

  • Brand: HG Semi
  • Product Family: Darlington Array Power Driver Integrated Circuit

Technical Specifications

Product Name Package Print Name Packaging Quantity
ULN2003AN DIP-16 ULN2003A Tube 1000 pcs/box
ULN2003AM/TR SOP-16 ULN2003A Tape & Reel 2500 pcs/reel
ULN2003AMT/TR TSSOP-16 2003A Tape & Reel 2500 pcs/reel
Parameter Range Unit
Storage Temperature -65 to 150
Operating Temperature Range -40 to 85
Junction Temperature Range -40 to 150
Input Voltage -0.3 to 30 V
Output Voltage 55 V
Emitter to Base Breakdown Voltage 6.0 V
Collector Continuous Current (per output) 500 mA
Base Continuous Current 25 mA
Lead Temperature (Soldering, 10s) 245
Symbol Parameter Test Condition Min Typical Max Unit
ICEX Output Leakage Current TA= 25C, VCE = 50V (Fig. 1) 20 A
TA= 85C, VCE = 50V (Fig. 1) 100 A
VCE(Sat) CE Saturation Voltage IC= 350mA, IB = 500A (Fig. 3) (Note 3) 1.30 1.6 V
IC= 200mA, IB = 350A (Fig. 3) 1.1 1.3 V
IC= 100mA, IB = 250A (Fig. 3) 0.9 1.1 V
II(ON) Turn-On Input Current VI= 3.85V (Fig. 4) 0.93 1.35 mA
II(OFF) Turn-Off Input Current (Note 4) IC= 500A (Fig. 5) 50 100 A
TA= +25C 50 100 A
TA= +85C 25 50 A
VI(ON) Turn-On Input Voltage (Note 5) VCE =2.0V, IC=200mA (Fig. 6) 2.4 V
VCE =2.0V, IC=250mA (Fig. 6) 2.7 V
VCE =2.0V, IC=300mA (Fig. 6) 3.0 V
CI Input Capacitance 15 30 pF
tPLH Turn-On Delay Time 0.5 VI to 0.5 VO 0.5 1.0 s
tPHL Turn-Off Delay Time 0.5 VI to 0.5 VO 0.5 1.0 s
IR Clamp Diode Leakage Current VR= 50V (Fig. 7) 5 10 A
TA= 25C 5 10 A
TA= 85C 10 50 A
VF Clamp Diode Forward Voltage Drop IF= 350mA (Fig. 8) 1.7 2.0 V

Notes:

  1. Absolute maximum ratings are limits beyond which the device may be damaged, and are not intended as normal operating conditions.
  2. Unless otherwise specified, all conditions apply to the Darlington array.
  3. Under normal conditions, the continuous operating current per output at 70C with a pulse width of 20ms is 350mA, with VCC(Sat) = 1.6V.

2309121602_HGSEMI-ULN2003AN_C7432319.pdf

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