Compact and HANSCHIP semiconductor ULN2003IPWRG TSSOP 16 package driver IC for industrial electronics

Key Attributes
Model Number: ULN2003IPWRG
Product Custom Attributes
Current - Collector(Ic):
500mA
Mfr. Part #:
ULN2003IPWRG
Package:
TSSOP-16
Product Description

Product Overview

The ULN2003 is a high-voltage, high-current Darlington array consisting of seven silicon NPN Darlington pairs. Each output is an open-collector type with a common emitter. Internal clamp diodes and base-emitter resistors are included for improved efficiency and reduced leakage. Each Darlington pair has a 2.7K base resistor, making it compatible with TTL and CMOS circuits at 5V. It can directly handle data that previously required standard logic buffers. With high operating voltage, large current, a sink current of up to 500mA, and the ability to withstand 50V in the off-state, the ULN2003 offers a robust solution for driving multiple interfaces. Applications include driving solenoids, relays, DC incandescent lamps, small motors, and LEDs.

Product Attributes

  • Brand: (Hanschip)
  • Origin: (Shenzhen)

Technical Specifications

Product NamePackagePrint NamePackagingQuantity
ULN2003IPGDIP-16ULN2003ITube1000 pcs/box
ULN2003IDRGSOP-16ULN2003ITape & Reel2500 pcs/reel
ULN2003IPWRGTSSOP-16ULN2003ITape & Reel2500 pcs/reel
ULN2003CPGDIP-16ULN2003CTube1000 pcs/box
ULN2003CDRGSOP-16ULN2003CTape & Reel2500 pcs/reel
ULN2003CPWRGTSSOP-16ULN2003CTape & Reel2500 pcs/reel
ParameterRange
Storage Temperature-65150
Operating Temperature Range (ULN2003C)070
Operating Temperature Range (ULN2003I)-4085
Junction Temperature Range-40150
Input Voltage-0.3V30V
Output Voltage55V
Emitter to Base Breakdown Voltage6.0V
Collector Continuous Current (per channel)500mA
Base Continuous Current25mA
Lead Temperature (Soldering, 10s)245
SymbolParameterTest ConditionMinTypicalMaxUnit
ICEXOutput Leakage CurrentTA= 25C, VCE = 50V (Fig.1)20A
TA= 85C, VCE = 50V (Fig.1)100A
VCE(Sat)CE Saturation VoltageIC= 350mA, IB = 500A (Fig.3) (Note 3)1.301.6V
IC= 200mA, IB = 350A (Fig.3)1.11.3V
IC= 100mA, IB = 250A (Fig.3)0.91.1V
II(ON)ON-State Input CurrentVI= 3.85V (Fig.4)0.931.35mA
II(OFF)OFF-State Input Current (Note 4)IC= 500A (Fig.5)50A
TA= +25C50100A
TA= +85C2550A
VI(ON)ON-State Input Voltage (Note 5)VCE =2.0V,IC=200mA (Fig.6 )2.4V
VCE =2.0V,IC=250mA (Fig.6 )2.7V
VCE =2.0V,IC=300mA (Fig.6 )3.0V
CIInput Capacitance1530pF
tPLHTurn-on Delay Time0.5 VI to 0.5 VO1.0s
tPHLTurn-off Delay Time0.5 VI to 0.5 VO1.0s
IRClamp Diode Leakage CurrentVR= 50V (Fig.7)A
TA= 25C510
TA= 85C1050
VFClamp Diode Forward Voltage DropIF= 350mA (Fig.8 )1.72.0V

2401121831_HANSCHIP-semiconductor-ULN2003IPWRG_C19723746.pdf

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