150V P Channel MOSFET HUASHUO HSM01P15 Fast Switching Device for Load Switching and LED Applications
Key Attributes
Model Number:
HSM01P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
780mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@75V
Number:
1 P-Channel
Input Capacitance(Ciss):
715pF@75V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10.5nC@10V
Mfr. Part #:
HSM01P15
Package:
SOP-8
Product Description
HSM01P15 P-Ch 150V Fast Switching MOSFETs
The HSM01P15 is a P-Channel, 150V Fast Switching MOSFET designed for various power management applications. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is 100% EAS Guaranteed and available as a Green Device. Key applications include load switching, power management, LED backlighting, and networking applications.
Product Attributes
- Brand: HS-Semi
- Product Series: HSM01P15
- Technology: Trench
- Channel Type: P-Channel
- Switching Speed: Fast Switching
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -150 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | -1.3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | -0.89 | A | |||
| IDM | Pulsed Drain Current2 | -4.4 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 12.5 | mJ | |||
| IAS | Avalanche Current | -5 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 40 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -150 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-1A | 650 | 780 | m | |
| VGS=-6V , ID=-0.5A | 700 | 980 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 5.42 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-120V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-120V , VGS=0V , TJ=150 | --- | 30 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 12 | --- | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-75V , VGS=-10V , ID=-1A | 10.5 | --- | nC | |
| Qgs | Gate-Source Charge | 3.2 | --- | nC | ||
| Qgd | Gate-Drain Charge | 2.3 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6, ID=-1A | 21 | --- | ns | |
| Tr | Rise Time | 17 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 40 | --- | ns | ||
| Tf | Fall Time | 18 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-75V , VGS=0V , F=1MHz | 715 | --- | pF | |
| Coss | Output Capacitance | 21 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 14 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | -1 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM01P15 | SOP-8 | 2500/Tape&Reel |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-50V, VGS=-10V, L=1mH, IAS=-5A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. For diode characteristics, IS is the current through the intrinsic body diode.
2410121637_HUASHUO-HSM01P15_C2903557.pdf
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