N Channel MOSFET With 5.8A Drain Current High Diode HD3400 Suitable For Load Switching Applications
Key Attributes
Model Number:
HD3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
350mW
Mfr. Part #:
HD3400
Package:
SOT-23
Product Description
Product Overview
The HD3400 is a high-density N-Channel MOSFET from High Diode Semiconductor, designed for extremely low RDS(ON) and exceptional DC current capability. This SOT-23 packaged semiconductor is ideal for load/power switching and interfacing applications, offering efficient performance with a 30V Drain-Source Voltage and a maximum continuous drain current of 5.8A. Its high-density cell design contributes to its superior on-resistance characteristics.
Product Attributes
- Brand: High Diode Semiconductor
- Model: HD3400
- Package: SOT-23 Plastic-Encapsulated
- Type: N-Channel MOSFET
- Marking: R0
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| RDS(on)MAX | 10V | 35 | m | |||
| 2.5V | 52 | m | ||||
| 4.5V | 40 | m | ||||
| ID | 5.8 | A | ||||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | A | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =5.8A | 35 | m | ||
| VGS =4.5V, ID =5A | 40 | m | ||||
| VGS =2.5V,ID=4A | 52 | m | ||||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.4 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 1050 | pF | |||
| Output capacitance | Coss | 99 | pF | |||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 77 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 5 | ns | ||
| Turn-on rise time | tr | 7 | ns | |||
| Turn-off delay time | td(off) | 40 | ns | |||
| Turn-off fall time | tf | 6 | ns | |||
| Drain-source diode characteristics | ||||||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 1 | V | ||
| General Parameters | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Drain Current-Pulsed | IDM | (note 1) | 30 | A | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | (note 2) | 357 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~+150 | |||
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test: Pulse Width300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
Applications
- Load/Power Switching
- Interfacing
- Switching
2411212331_High-Diode-HD3400_C466665.pdf
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