semiconductor transistor High Diode S9013 NPN transistor with high collector current in SOT23 package
Key Attributes
Model Number:
S9013
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is a high diode semiconductor transistor in a SOT-23 package. It features high collector current, complementary to the S9012, and excellent hFE linearity. This NPN transistor is suitable for general-purpose applications requiring high collector current.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23 Plastic-Encapsulate Transistors
- Type: NPN Transistor
- Complementary to: S9012
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | V | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 416 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55+150 | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | uA | ||
| Collector cut-off current | ICEO | VCE=20V, IB=0 | 0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | uA | ||
| DC current gain (hFE(1)) | hFE | VCE=1V, IC=50mA | 120 | 400 | ||
| DC current gain (hFE(2)) | hFE | VCE=1V, IC=500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCB=1V,IC=10mA | 0.7 | V | ||
| Transition frequency | fT | VCE=6V,IC=20mA, f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=6V, IE=0, f=1MHz | 8 | pF | ||
2410121321_High-Diode-S9013_C466627.pdf
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