Durable High Diode SS8550 PNP transistor designed for general purpose electronic circuit integration

Key Attributes
Model Number: SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description

Product Overview

The SS8550 is a complementary PNP transistor to the SS8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package and is suitable for various electronic circuits requiring amplification or switching.

Product Attributes

  • Brand: High Diode Semiconductor
  • Complementary to: SS8050
  • Package: SOT-23

Technical Specifications

SymbolParameterVCEBOVCEOVEBOICPCRJATjTstghFE RankhFE Range
SS8550General Characteristics-40 V-25 V-5 V-1.5 A300 mW417 /W150 -55+150 L, H, J120-200, 200-350, 300-400
ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100A, IE=0-40V
Collector-emitter breakdown voltageV(BR)CEOIC=-0.1mA, IB=0-25V
Emitter-base breakdown voltageV(BR)EBOIE=-100A, IC=0-5V
Collector cut-off currentICBOVCB=-40V, IE=0-100nA
Collector cut-off currentICEOVCE=-20V, IB=0-100nA
Emitter cut-off currentIEBOVEB=-5V, IC=0-100nA
DC current gainhFE(1)VCE=-1V, IC=-100mA120400
DC current gainhFE(2)VCE=-1V, IC=-800mA40
Collector-emitter saturation voltageVCE(sat)IC=-800mA, IB=-80mA-0.5V
Base-emitter saturation voltageVBE(sat)IC=-800mA, IB=-80mA-1.2V
Base-emitter voltageVBEVCE=-1V, IC=-10mA-1V
Transition frequencyfTVCE=-10V,IC=-50mA , f=30MHz100MHz
Collector output capacitanceCobVCB=-10V, IE=0, f=1MHz20pF

2410121332_High-Diode-SS8550_C466632.pdf

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