P Channel MOSFET 60V Fast Switching Device HUASHUO HSH6115 Suitable for Synchronous Buck Converters
Key Attributes
Model Number:
HSH6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 P-Channel
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.635nF
Pd - Power Dissipation:
86.8W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSH6115
Package:
TO-263
Product Description
Product Overview
The HSH6115 is a P-channel, 60V fast-switching MOSFET designed for high-efficiency synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | -45 | A | |||
| ID@TC=100 | Continuous Drain Current1 | -34 | A | |||
| IDM | Pulsed Drain Current2 | -90 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 113 | mJ | |||
| IAS | Avalanche Current | -47.6 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 86.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.44 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 25 | m | |
| VGS=-4.5V , ID=-12A | --- | 33 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 5 | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 23 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | 14 | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | --- | nC | |
| Qgs | Gate-Source Charge | 6.7 | --- | |||
| Qgd | Gate-Drain Charge | 5.5 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | --- | ns | |
| tr | Rise Time | 23.6 | --- | |||
| td(off) | Turn-Off Delay Time | 100 | --- | |||
| tf | Fall Time | 6.8 | --- | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | --- | pF | |
| Coss | Output Capacitance | 224 | --- | |||
| Crss | Reverse Transfer Capacitance | 141 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -45 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-47.6A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121447_HUASHUO-HSH6115_C2828506.pdf
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