NPN transistor High Diode MMBT3904 featuring 40 volts collector emitter voltage in small SOT23 package
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
Product Overview
The MMBT3904 is a high diode semiconductor NPN transistor in a SOT-23 package. It offers a collector-emitter voltage of 40V and a collector current of 200mA, making it suitable for general-purpose amplification and switching applications.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: NPN Transistor
- Complementary to: MMBT3906
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| IC | Collector Current | 200 | mA | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=10A, IE=0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | ||
| ICEX | Collector cut-off current | VCE=30V, VEB(off)=3V | 50 | nA | ||
| ICBO | Collector cut-off current | VCB= 60V, IE=0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB=5V, IC=0 | 100 | nA | ||
| hFE | DC current gain | VCE=1V, IC=10mA | 100 | 300 | ||
| hFE | DC current gain | VCE=1V, IC=50mA | 60 | |||
| hFE | DC current gain | VCE=1V, IC=100mA | 30 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=50mA, IB=5mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=50mA, IB=5mA | 0.95 | V | ||
| fT | Transition frequency | VCE=20V,IC=10mA, f=100MHz | 300 | MHz | ||
| td | Delay time | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| tr | Rise time | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| ts | Storage time | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| tf | Fall time | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns | ||
| PC | Collector Power Dissipation | 200 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 625 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 |
2410121327_High-Diode-MMBT3904_C466624.pdf
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