High cell density trench technology MOSFET HUASHUO HSM3202 dual N channel 30V fast switching device
Product Overview
The HSM3202 is a dual N-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM3202 | Drain-Source Voltage (VDS) | - | - | - | 30 | V |
| Gate-Source Voltage (VGS) | - | - | - | ±20 | V | |
| Continuous Drain Current (ID@TA=25) | VGS @ 10V1 | - | - | 7.8 | A | |
| Continuous Drain Current (ID@TA=70) | VGS @ 10V1 | - | - | 5.8 | A | |
| Pulsed Drain Current (IDM)2 | - | - | - | 37 | A | |
| Single Pulse Avalanche Energy (EAS)3 | - | - | - | 22.1 | mJ | |
| Avalanche Current (IAS) | - | - | - | 21 | A | |
| Total Power Dissipation (PD@TA=25)4 | - | - | - | 1.5 | W | |
| Storage Temperature Range (TSTG) | - | -55 | - | 150 | ||
| Operating Junction Temperature Range (TJ) | - | -55 | - | 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | - | - | V | |
| Static Drain-Source On-Resistance (RDS(ON),max)2 | VGS=10V , ID=7A | - | - | 18 | mΩ | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=4.5V , ID=4A | - | - | 28 | mΩ | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | - | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | µA | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | - | - | ±100 | nA | |
| Diode Characteristics | Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | - | - | 7.8 | A |
| Pulsed Source Current (ISM)2,5 | - | - | - | 37 | A | |
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=7A , dI/dt=100A/µs , TJ=25 | - | - | 20 | ns |
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=21A.
4 Power dissipation is limited by 150 junction temperature.
5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM3202 | SOP-8 | 4000/Tape&Reel |
2410121448_HUASHUO-HSM3202_C700977.pdf
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