Trench N Channel MOSFET HUASHUO BSS138 Offering High Cell Density and Performance for Power Circuits
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
230mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.4Ω@10V,0.22A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
26pF@25V
Pd - Power Dissipation:
360mW
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is a high cell density trenched N-channel MOSFET designed for fast switching applications, offering excellent RDS(ON) and gate charge characteristics. It is ideal for most synchronous buck converter applications and meets RoHS and Green Product requirements. This device is rugged, reliable, and suitable for battery-operated systems, leveraging advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Device Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Features: Green Device Available, Rugged and Reliable
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 50 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID (Continuous Drain Current) | @TA=25, VGS @ 10V | 0.23 | A | ||
| PD (Total Power Dissipation) | @TA=25 | 0.36 | W | ||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-ambient) | (steady state) | --- | 357 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 50 | --- | --- | V |
| BVDSS/TJ (BVDSS Temperature Coefficient) | Reference to 25 , ID=1mA | 0.122 | --- | V/ | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=10V , ID=0.22A | --- | 3.4 | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V , ID=0.22A | --- | 6 | ||
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 0.8 | --- | 1.5 | V |
| VGS(th) (VGS(th) Temperature Coefficient) | -4.84 | --- | mV/ | ||
| IDSS (Drain-Source Leakage Current) | VDS=50V , VGS=0V , TJ=25 | --- | 0.5 | uA | |
| IDSS (Drain-Source Leakage Current) | VDS=50V , VGS=0V , TJ=55 | --- | 100 | uA | |
| IGSS (Gate-Source Leakage Current) | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs (Forward Transconductance) | VDS=5V , ID=2A | 0.12 | --- | --- | S |
| Td(on) (Turn-On Delay Time) | VDD=30V , VGS=10V , RG=6, ID=0.3A | --- | 4 | ns | |
| Tr (Rise Time) | --- | 17 | ns | ||
| Td(off) (Turn-Off Delay Time) | --- | 35 | ns | ||
| Tf (Fall Time) | --- | 13 | ns | ||
| Ciss (Input Capacitance) | VDS=25V , VGS=0V , f=1MHz | 26 | --- | pF | |
| Coss (Output Capacitance) | 14 | --- | pF | ||
| Crss (Reverse Transfer Capacitance) | 5 | --- | pF | ||
| Diode Characteristics | |||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | --- | 0.23 | A | |
| VSD (Diode Forward Voltage) | VGS=0V , IS=0.44A , TJ=25 | --- | 1.4 | V | |
| Ordering Information | |||||
| Part Number | Package code | Packaging | |||
| BSS138 | SOT-23 | 3000/Tape&Reel | |||
2005121032_HUASHUO-BSS138_C518792.pdf
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