SOT23 Package High Diode MMBTA44 NPN Transistor Designed for Robust High Voltage Electronic Circuits
Key Attributes
Model Number:
MMBTA44
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
MMBTA44
Package:
SOT-23
Product Description
Product Overview
High Diode Semiconductor MMBTA44 is a NPN transistor in a SOT-23 package, designed for high voltage applications. It offers a high collector-emitter voltage of 400V and is suitable for various electronic circuits requiring robust voltage handling.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: NPN Transistor
- Complementary to: MMBTA94
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| Collector-Base Voltage | V | 400 | V | ||||
| Collector-Emitter Voltage | VCEO | 400 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current | IC | 200 | mA | ||||
| Collector Power Dissipation | PC | 350 | mW | ||||
| Thermal Resistance Junction To Ambient | RJA | 357 | /W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55+150 | |||||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 400 | V | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO* | IC=1mA, IB=0 | 400 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | |||
| Collector Cut-off Current | ICBO | VCB=400V, IE=0 | 0.1 | A | |||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 0.1 | A | |||
| DC Current Gain | hFE(1) | VCE=10V, IC=1mA | 40 | ||||
| DC Current Gain | hFE(2) | VCE=10V, IC=10mA | 50 | 200 | |||
| DC Current Gain | hFE(3) | VCE=10V, IC=50mA | 45 | ||||
| DC Current Gain | hFE(4) | VCE=10V, IC=100mA | 40 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat)1* | IC=1mA, IB=0.1mA | 0.4 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat)2* | IC=10mA, IB=1mA | 0.5 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat)3* | IC=50mA, IB=5mA | 0.75 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=10mA, IB=1mA | 0.75 | V | |||
| Collector Output Capacitance | Cob | VCB=20V, IE=0, f=1MHz | 7 | pF | |||
| Emitter Input Capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 130 | pF | |||
2410121332_High-Diode-MMBTA44_C466650.pdf
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