SOD323 Package Voltage Stabilization Diode Featuring High Diode BZT52C12S for Electronic Applications

Key Attributes
Model Number: BZT52C12S
Product Custom Attributes
Impedance(Zzt):
25Ω
Diode Configuration:
Independent
Zener Voltage(Range):
11.4V~12.7V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
12V
Mfr. Part #:
BZT52C12S
Package:
SOD-323
Product Description

Product Overview

The SOD323 Plastic-Encapsulated Diodes are Zener diodes designed for voltage stabilization. With a maximum power dissipation of 200mW and a Zener voltage range from 2.4V to 43V, these diodes are suitable for various electronic applications requiring stable voltage references. They are available in the compact SOD323 package.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package Type: SOD323

Technical Specifications

Item Symbol Unit Conditions Max TYPE Marking Nom(V) Min(V) Max(V) IZT (mA) ZZT@IZT () IZK (A) IR (mA) VR (V) VZ, TEMPERATURE COEFFICIENT (mV/)
Max Power dissipation Pd mW TA=25 200
Maximum junction temperature Tj 150
Storage temperature range Tstg -65 to +150
Thermal resistance RJA /W Between junction and ambient 625
Forward voltage VF V IF =10mA 0.9
Zener Voltage Range (Note 2) VZ@IZT V IZT=5mA (unless otherwise specified) BZT52C2V4S WX 2.4 2.20 2.60 5 100 50 1.0 -3.5 0
BZT52C2V7S W1 2.7 2.5 2.9 5 100 20 1.0 -3.5 0
BZT52C3V0S W2 3.0 2.8 3.2 5 95 10 1.0 -3.5 0
BZT52C3V3S W3 3.3 3.1 3.5 5 95 5 1.0 -3.5 0
BZT52C3V6S W4 3.6 3.4 3.8 5 90 5 1.0 -3.5 0
BZT52C3V9S W5 3.9 3.7 4.1 5 90 3 1.0 -3.5 0
BZT52C4V3S W6 4.3 4.0 4.6 5 90 3 1.0 -3.5 0
BZT52C4V7S W7 4.7 4.4 5.0 5 80 3 2.0 -3.5 0.2
BZT52C5V1S W8 5.1 4.8 5.4 5 60 2 2.0 -2.7 1.2
BZT52C5V6S W9 5.6 5.2 6.0 5 40 1 2.0 -2 2.5
BZT52C6V2S WA 6.2 5.8 6.6 5 10 3 4.0 0.4 3.7
BZT52C6V8S WB 6.8 6.4 7.2 5 15 2 4.0 1.2 4.5
BZT52C7V5S WC 7.5 7.0 7.9 5 15 1 5.0 2.5 5.3
BZT52C8V2S WD 8.2 7.7 8.7 5 15 0.7 5.0 3.2 6.2
BZT52C9V1S WE 9.1 8.5 9.6 5 15 0.5 6.0 3.8 7.0
BZT52C10S WF 10 9.4 10.6 5 20 0.2 7.0 4.5 8.0
BZT52C11S WG 11 10.4 11.6 5 20 0.1 8.0 5.4 9.0
BZT52C12S WH 12 11.4 12.7 5 25 0.1 8.0 6.0 10.0
BZT52C13S WI 13 12.4 14.1 5 30 0.1 8.0 7.0 11.0
BZT52C15S WJ 15 13.8 15.6 5 30 0.1 10.5 9.2 13
BZT52C16S WK 16 15.3 17.1 5 40 0.1 11.2 10.4 14
BZT52C18S WL 18 16.8 19.1 5 45 0.1 12.6 12.4 16
BZT52C20S WM 20 18.8 21.2 5 55 0.1 14.0 14.4 18.0
BZT52C22S WN 22 20.8 23.3 5 55 0.1 15.4 16.4 20.0
BZT52C24S WO 24 22.8 25.6 5 70 0.1 16.8 18.4 22.0
BZT52C27S WP 27 25.1 28.9 2 80 0.5 0.1 18.9 21.4 25.3
BZT52C30S WQ 30 28.0 32.0 2 80 0.5 0.1 21.0 24.4 29.4
BZT52C33S WR 33 31.0 35.0 2 80 0.5 0.1 23.1 27.4 33.4
BZT52C36S WS 36 34.0 38.0 2 90 0.5 0.1 25.2 30.4 37.4
BZT52C39S WT 39 37.0 41.0 2 130 0.5 0.1 27.3 33.4 41.2
BZT52C43S WU 43 40.0 46.0 2 100 1 0.1 32 10 12

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121255_High-Diode-BZT52C12S_C571389.pdf

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