Trenched N Channel MOSFET HUASHUO HSM6006 Featuring High Cell Density and Fast Switching Performance
Key Attributes
Model Number:
HSM6006
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 N-channel
Output Capacitance(Coss):
145pF
Input Capacitance(Ciss):
2.423nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
HSM6006
Package:
SOP-8
Product Description
Product Overview
The HSM6006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for demanding applications requiring efficient power conversion.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 6.3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 5 | A | |||
| IDM | Pulsed Drain Current2 | 32 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 39 | mJ | |||
| IAS | Avalanche Current | 28 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 1 | --- | 85 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 25 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.057 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=6A | --- | --- | 18 | m |
| VGS=4.5V , ID=4A | --- | --- | 20 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -5.68 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=6A | --- | 40 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=6A | --- | 18.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 7.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.2 | --- | ||
| td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=6A | --- | 7.6 | --- | ns |
| tr | Rise Time | --- | 8.6 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 47 | --- | ||
| tf | Fall Time | --- | 4 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2423 | --- | pF |
| Coss | Output Capacitance | --- | 145 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 97 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 6.3 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 32 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | --- | --- | 1 | V |
| trr | Reverse Recovery Time | IF=6A , dI/dt=100A/µs , TJ=25 | --- | 15 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 10.4 | --- | nC | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSM6006 | SOP-8 | 2500/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=28A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121455_HUASHUO-HSM6006_C2987711.pdf
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