Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation
Key Attributes
Model Number:
HSP6048
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
1.522nF
Input Capacitance(Ciss):
3.458nF
Pd - Power Dissipation:
255W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
HSP6048
Package:
TO-220
Product Description
Product Overview
The HSP6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HSP
- Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSP6048 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | 150 | A | ||||
| Continuous Drain Current (ID@TC=100) | 110 | A | ||||
| Pulsed Drain Current (IDM) | 340 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 101 | mJ | ||||
| Avalanche Current (IAS) | 55 | A | ||||
| Total Power Dissipation (PD@TC=25) | 255 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 0.45 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),TYP) | VGS=10V , ID=20A | --- | 3.0 | 3.6 | m | |
| Static Drain-Source On-Resistance (RDS(ON),TYP) | VGS=4.5V , ID=15A | --- | 4.4 | 5.4 | m | |
| HSP6048 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=20A | --- | 65 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 0.7 | --- | ||
| Total Gate Charge (Qg) | VDS=30V , VGS=10V , ID=20A | --- | 58 | --- | nC | |
| Input Capacitance (Ciss) | VDS=30V , VGS=0V , f=1MHz | --- | 3458 | --- | pF | |
| Output Capacitance (Coss) | --- | 1522 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 22 | --- | pF | ||
| HSP6048 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 150 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V | |
| Reverse Recovery Charge (Qrr) | IF=20A , dI/dt=100A/s , TJ=25 | --- | 85 | --- | nC |
2410121656_HUASHUO-HSP6048_C845621.pdf
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