Power switching MOSFET HUASHUO FDN335N featuring low RDS ON and excellent dv dt effect at 20V voltage
Key Attributes
Model Number:
FDN335N
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
180pF
Output Capacitance(Coss):
39pF
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
FDN335N
Package:
SOT-23
Product Description
Product Overview
The FDN335N is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most small power switching and load switch applications. This fast-switching MOSFET operates at 20V and features super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology. It meets RoHS and Green Product requirements with full function reliability approval. The FDN335N is available as a Green Device.
Product Attributes
- Brand: hs-semi.cn
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 2.2 | A | |||
| IDM | Pulsed Drain Current2 | 10 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.71 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 120 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 65 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=2.5A | 46 | 60 | m | |
| VGS=2.5V , ID=1A | 61 | 85 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.65 | 1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=16V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=2A | 5 | --- | S | |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=2.5A | 3.5 | --- | nC | |
| Qgs | Gate-Source Charge | 0.6 | --- | |||
| Qgd | Gate-Drain Charge | 0.45 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=6 ID=2.5A | 8 | --- | ns | |
| Tr | Rise Time | 7 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 30 | --- | ns | ||
| Tf | Fall Time | 7 | --- | ns | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 180 | --- | pF | |
| Coss | Output Capacitance | 39 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 20 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 3 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| FDN335N | SOT-23 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121642_HUASHUO-FDN335N_C845588.pdf
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