P Channel Enhancement Mode MOSFET High Diode HD3401 with Low RDS ON and High Current Capability
Key Attributes
Model Number:
HD3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
HD3401
Package:
SOT-23
Product Description
High Diode Semiconductor HD3401 P-Channel MOSFET
Product Overview
The HD3401 is a P-Channel Enhancement Mode Field Effect Transistor from High Diode Semiconductor. It features a high dense cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for load/power switching and interfacing applications.
Product Attributes
- Brand: High Diode Semiconductor
- Model: HD3401
- Type: P-Channel Enhancement Mode Field Effect Transistor
- Package: SOT-23 Plastic-Encapsulated
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | VGS = 0V, ID =-250A |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | -4.2 | A | |
| Power Dissipation | PD | 0.35 | W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~ +150 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS =-24V,VGS = 0V |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS =12V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.7 to -1.3 | V | VDS =VGS, ID =-250A |
| Drain-Source On-Resistance | RDS(on) | 44 to 65 | m | VGS =-10V, ID =-4.2A |
| Drain-Source On-Resistance | RDS(on) | 55 to 75 | m | VGS =-4.5V, ID =-4A |
| Drain-Source On-Resistance | RDS(on) | 75 to 90 | m | VGS =-2.5V, ID =-1A |
| Forward Tranconductance | gFS | 10 | S | VDS =-5V, ID =-4.2A |
| Input Capacitance | Ciss | 954 | pF | VDS =-15V,VGS =0V,f =1MHz |
| Output Capacitance | Coss | 115 | pF | VDS =-15V,VGS =0V,f =1MHz |
| Reverse Transfer Capacitance | Crss | 77 | pF | VDS =-15V,VGS =0V,f =1MHz |
| Turn-on Delay Time | td(on) | 6.3 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 |
| Turn-on Rise Time | tr | 3.2 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 |
| Turn-off Delay Time | td(off) | 38.2 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 |
| Turn-off Fall Time | tf | 12 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 |
| Diode Forward Current | IS | -2 | A | |
| Diode Pulsed Forward Current | ISM | -25 | A | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS =0V, IS=-4.2A |
Note 1: Pulse test; pulse width300s, duty cycle2%.
Note 2: Guaranteed by design, not subject to production testing.
Applications
- Load/Power Switching
- Interfacing Switching
2410121326_High-Diode-HD3401_C466666.pdf
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