TrenchFET Power MOSFET High Diode HD2302 N Channel with Low Gate Charge and Fast Switching Capability
Key Attributes
Model Number:
HD2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@2.5V,2.1A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
HD2302
Package:
SOT-23
Product Description
Product Overview
The HD2302 is an N-Channel MOSFET from High Diode Semiconductor, designed as an extreme fast switch. It features excellent RDS(on) and low gate charge, making it suitable for power applications. This TrenchFET Power MOSFET is encapsulated in a SOT-23 plastic package.
Product Attributes
- Brand: High Diode Semiconductor
- Model: HD2302
- Type: N-Channel MOSFET
- Package: SOT-23 Plastic-Encapsulate
- Technology: TrenchFET Power MOSFET
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | 8 | V | |
| Continuous Drain Current | ID | 2.1 | A | |
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.6 | A | |
| Power Dissipation | PD | 0.4 | W | |
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 312.5 | /W | |
| Operating Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55 ~+150 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =10A |
| Gate-threshold voltage | VGS(th) | 0.65 - 0.95 - 1.2 | V | VDS =VGS, ID =50A |
| Gate-body leakage | IGSS | 100 | nA | VDS =0V, VGS =8V |
| Zero gate voltage drain current | IDSS | 1 | A | VDS =20V, VGS =0V |
| Drain-source on-resistance | rDS(on) | 0.035 - 0.060 | VGS =4.5V, ID =3.6A | |
| Drain-source on-resistance | rDS(on) | 0.045 - 0.115 | VGS =2.5V, ID =3.1A | |
| Forward transconductance | gfs | 8 | S | VDS =5V, ID =3.6A |
| Diode forward voltage | VSD | 0.76 - 1.2 | V | IS=0.94A,VGS=0V |
| Total gate charge | Qg | 4.0 - 10 | nC | VDS =10V,VGS =4.5V,ID =3.6A |
| Gate-source charge | Qgs | 0.65 | nC | VDS =10V,VGS =4.5V,ID =3.6A |
| Gate-drain charge | Qg d | 1.5 | nC | VDS =10V,VGS =4.5V,ID =3.6A |
| Input capacitance | Ciss | 300 | pF | VDS =10V,VGS =0V,f=1MHz |
| Output capacitance | Coss | 120 | pF | VDS =10V,VGS =0V,f=1MHz |
| Reverse transfer capacitance | Crss | 80 | pF | VDS =10V,VGS =0V,f=1MHz |
| Turn-on delay time | td(on) | 7 - 15 | ns | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 |
| Rise time | tr | 55 - 80 | ns | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 |
| Turn-off delay time | td(off) | 16 - 60 | ns | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 |
| Fall time | tf | 10 - 25 | ns | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 |
Note: Parameters marked with 'a' are Pulse Tested. Parameters marked with 'b' have no way to verify.
2411220642_High-Diode-HD2302_C466663.pdf
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