Low RDS on N Channel MOSFET High Diode 2N7002K ideal for load switching and DC DC converter circuits

Key Attributes
Model Number: 2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-
RDS(on):
5.3Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description

Product Overview

The 2N7002K is a high-density, N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a low RDS(on), high saturation current capability, and is rugged and reliable. This MOSFET is ESD protected and suitable for load switching in portable devices and DC/DC converters.

Product Attributes

  • Brand: High Diode Semiconductor
  • Product Type: N-Channel MOSFET
  • Marking: 2N7002K
  • Package: SOT-23 Plastic-Encapsulated

Technical Specifications

Symbol Parameter Test Condition Min Type Max Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0V, ID =250A 60 V
IDSS Zero gate voltage drain current VDS =48V,VGS = 0V 1 uA
IGSS1 Gate-body leakage current VGS =20V, VDS = 0V 10 A
IGSS2 Gate-body leakage current VGS =10V, VDS = 0V 200 nA
IGSS2 Gate-body leakage current VGS =5V, VDS = 0V 100 nA
VGS(th) Gate threshold voltage* VDS =VGS, ID =250A 1 1.4 2.5 V
RDS(on) Drain-source on-resistance* VGS =10V, ID =500mA 1.3 5
RDS(on) Drain-source on-resistance* VGS =4.5V, ID =200mA 1.4 5.3
Qr Recovered charge VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S 30 nC
Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHz 40 pF
Coss Output Capacitance 30 pF
Crss Reverse Transfer Capacitance 10 pF
td(on) Turn-on delay time VGS=10 V, VDD=50V, RG=50 RGS=50,RL=250 10 ns
td(off) Turn-off delay time 15 ns
trr Reverse recovery Time VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S 30 nC
VSD Diode Forward voltage VGS =0V, IS=300mA 0.97 1.5 V
BVGSO Gate-Source Breakdown Voltage IGS=1mA(Open Drain) 21.5 30 V
VDS Drain-Source voltage 60 V
ID Drain Current 340 mA
PD Power Dissipation 0.35 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 +150
RJA Thermal Resistance from Junction to Ambient 357 /W
VGS Gate-Source voltage 20 V

2410121317_High-Diode-2N7002K_C466661.pdf

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