Low RDS on N Channel MOSFET High Diode 2N7002K ideal for load switching and DC DC converter circuits
Product Overview
The 2N7002K is a high-density, N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a low RDS(on), high saturation current capability, and is rugged and reliable. This MOSFET is ESD protected and suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: High Diode Semiconductor
- Product Type: N-Channel MOSFET
- Marking: 2N7002K
- Package: SOT-23 Plastic-Encapsulated
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0V, ID =250A | 60 | V | ||
| IDSS | Zero gate voltage drain current | VDS =48V,VGS = 0V | 1 | uA | ||
| IGSS1 | Gate-body leakage current | VGS =20V, VDS = 0V | 10 | A | ||
| IGSS2 | Gate-body leakage current | VGS =10V, VDS = 0V | 200 | nA | ||
| IGSS2 | Gate-body leakage current | VGS =5V, VDS = 0V | 100 | nA | ||
| VGS(th) | Gate threshold voltage* | VDS =VGS, ID =250A | 1 | 1.4 | 2.5 | V |
| RDS(on) | Drain-source on-resistance* | VGS =10V, ID =500mA | 1.3 | 5 | ||
| RDS(on) | Drain-source on-resistance* | VGS =4.5V, ID =200mA | 1.4 | 5.3 | ||
| Qr | Recovered charge | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| Ciss | Input Capacitance | VDS=10V,VGS=0V,f=1MHz | 40 | pF | ||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | 10 | pF | |||
| td(on) | Turn-on delay time | VGS=10 V, VDD=50V, RG=50 RGS=50,RL=250 | 10 | ns | ||
| td(off) | Turn-off delay time | 15 | ns | |||
| trr | Reverse recovery Time | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| VSD | Diode Forward voltage | VGS =0V, IS=300mA | 0.97 | 1.5 | V | |
| BVGSO | Gate-Source Breakdown Voltage | IGS=1mA(Open Drain) | 21.5 | 30 | V | |
| VDS | Drain-Source voltage | 60 | V | |||
| ID | Drain Current | 340 | mA | |||
| PD | Power Dissipation | 0.35 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | /W | |||
| VGS | Gate-Source voltage | 20 | V |
2410121317_High-Diode-2N7002K_C466661.pdf
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