86--136 6733 2386
quality High cell density trenched p channel mosfet HUASHUO HSP3105 for synchronous buck converter applications factory
quality High cell density trenched p channel mosfet HUASHUO HSP3105 for synchronous buck converter applications factory

High cell density trenched p channel mosfet HUASHUO HSP3105 for synchronous buck converter applications

Key Attributes
Model Number: HSP3105
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
237pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.215nF@15V
Pd - Power Dissipation:
74W
Gate Charge(Qg):
-
Mfr. Part #:
HSP3105
Package:
TO-220
Product Description

Product Overview

The HSP3105 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for demanding applications.

Product Attributes

  • Brand: HS-Semi
  • Model: HSP3105
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -60 A
ID@TA=70 Continuous Drain Current, VGS @ -10V1 -38 A
IDM Pulsed Drain Current2 -150 A
EAS Single Pulse Avalanche Energy3 125 mJ
IAS Avalanche Current -50 A
PD@TA=25 Total Power Dissipation4 74 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 62 /W
RJA Thermal Resistance Junction-Ambient1(t10s) 1.68 /W
RJC Thermal Resistance Junction-Case1 24 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
RDS(ON),max Static Drain-Source On-Resistance2 VGS=-10V , ID=-30A 10 14 m
RDS(ON),max Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-15A 16 22 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 -1 uA
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-10A 30 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 9
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-15A 22 nC
Qgs Gate-Source Charge 8.7
Qgd Gate-Drain Charge 7.2
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3 ID=-15A 8 ns
Tr Rise Time 73.7
Td(off) Turn-Off Delay Time 61.8
Tf Fall Time 24.4
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 2215 pF
Coss Output Capacitance 310
Crss Reverse Transfer Capacitance 237
IS Continuous Source Current1,5 VG=VD=0V , Force Current -60 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1 V

Notes:

  • 1 The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
  • 2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
  • 3 The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-50A.
  • 4 The power dissipation is limited by 150 junction temperature.
  • 5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121525_HUASHUO-HSP3105_C701027.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.