power management solutions featuring High Diode HD2310 N Channel MOSFET with 60V drain source voltage
Key Attributes
Model Number:
HD2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-40℃~+150℃
RDS(on):
70mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
250pF@30V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
HD2310
Package:
SOT-23
Product Description
Product Overview
The HD2310 is a high-performance N-Channel MOSFET from High Diode Semiconductor, designed for efficient power and current handling. Encapsulated in a SOT-23 plastic package, this lead-free product is suitable for surface mount applications. Its robust design makes it ideal for DC/DC converters and battery switch applications, offering reliable performance with a 60V drain-source breakdown voltage and low on-resistance.
Product Attributes
- Brand: High Diode Semiconductor
- Model Marking: S10
- Package Type: SOT-23 Plastic-Encapsulate
- Material: Lead free product
- Channel Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |
| RDS(on)MAX | RDS(on)MAX | 105 | m@10V | |
| 125 | m@4.5V | |||
| ID | ID | 3 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 3 | A | |
| Pulsed Drain Current (note 1) | IDM | 10 | A | |
| Power Dissipation | PD | 0.35 | W | |
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =60V,VGS = 0V |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS =±20V, VDS = 0V |
| Gate Threshold Voltage (note 3) | VGS(th) | 0.5 - 1.2 - 2 | V | VDS =VGS, ID =250µA |
| Drain-Source On-Resistance (note 3) | RDS(on) | 70 - 105 | m | VGS =10V, ID =3A |
| 82 - 125 | m | VGS =4.5V, ID =3A | ||
| Forward Tranconductance (note 3) | gFS | 1.4 - 2.5 | S | VDS =15V, ID =2A |
| Dynamic Characteristics (note 4) | ||||
| Input Capacitance | Ciss | 250 | pF | VDS =30V,VGS =0V,f =1MHz |
| Output Capacitance | Coss | 26 | pF | |
| Reverse Transfer Capacitance | Crss | 20 | pF | |
| Switching Characteristics (note 4) | ||||
| Total Gate Charge | Qg | 7 | nC | VDS =30V,VGS =4.5V,ID =3A |
| Gate-Source Charge | Qgs | 1.2 | nC | |
| Gate-Drain Charge | Qg d | 1.5 | nC | |
| Turn-On Delay Time | td(on) | 6.5 | ns | VGS=10V,VDD=30V,ID=1.5A,RGEN=1 |
| Turn-On Rise Time | tr | 15.2 | ns | |
| Turn-Off Delay Time | td(off) | 15.2 | ns | |
| Turn-Off Fall Time | tf | 10.3 | ns | |
| Source-Drain Diode Characteristics (note 4) | ||||
| Body Diode Voltage | VSD | 0.8 - 1.2 | V | IS=3A,VGS=0V |
| Package Outline Dimensions (SOT-23) | ||||
| Symbol | Dimensions In Millimeters | Min | Max | Dimensions In Inches |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 1.800 | 2.000 | 0.071 | 0.079 |
| e1 | 0.950 TYP | 0.037 TYP | ||
| L | 0.550 REF | 0.022 REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0° | 8° | 0° | 8° | |
Notes:
- 1. Repetitive rating : Pulse width limited by junction temperature.
- 2. Surface mounted on FR4 board , t≤10s.
- 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
- 4. Guaranteed by design, not subject to producting.
2410121327_High-Diode-HD2310_C571348.pdf
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