High frequency switch and polarity protection dual high voltage Schottky rectifier HUAKE MBRF10100CT
Key Attributes
Model Number:
MBRF10100CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
100uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
960mV@10A
Current - Rectified:
5A
Mfr. Part #:
MBRF10100CT
Package:
TO-220F-3
Product Description
Product Overview
The MBRF10100CT is a dual high voltage Schottky rectifier from HUAKE semiconductors. It features a common cathode structure, low power loss, high efficiency, and a low forward voltage drop with high surge capability. This rectifier is ideal for high frequency switch, free-wheeling, and polarity protection applications.
Product Attributes
- Brand: HUAKE semiconductors
- Model: MBRF10100CT
- Document Version: B/0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Maximum Repetitive Reverse Voltage | VRRM | 100 | V | |
| VRRM | 100 | V | IR=100A | |
| Maximum DC Reverse Voltage | VR | 100 | V | |
| VR | 100 | V | ||
| Average Rectified Forward Current | IF(AV) | 5 (Per Leg) / 10 (Per Device) | A | Tc=120C |
| IF(AV) | 10 | A | Per Device, Tc=120C | |
| Peak Forward Surge Current | IFSM | 100 | A | 8.3ms Half Sine wave |
| Operating Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to+150 | C | |
| Thermal Resistance, Junction to Case | RJC | 4.0 | C/W | Per Leg, Tc=25C |
| Forward Voltage | VF | 0.86 | V | IF=5A, Tc=25C |
| VF | 0.76 | V | IF=5A, Tc=125C | |
| VF | 0.96 | V | IF=10A, Tc=25C | |
| VF | 0.86 | V | IF=10A, Tc=125C | |
| Reverse Current | IR | 0.1 | mA | VR =100V, Tc=25C |
| IR | 5 | mA | VR =100V, Tc=125C |
2410122024_HUAKE-MBRF10100CT_C570152.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
