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quality High cell density N channel MOSFET HUASHUO HSL6008 ideal for power switching and load switch circuits factory
quality High cell density N channel MOSFET HUASHUO HSL6008 ideal for power switching and load switch circuits factory

High cell density N channel MOSFET HUASHUO HSL6008 ideal for power switching and load switch circuits

Key Attributes
Model Number: HSL6008
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
35pF@48V
Number:
1 N-channel
Input Capacitance(Ciss):
715pF@48V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
HSL6008
Package:
SOT-223
Product Description

Product Overview

The HSL6008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements and offers features like super low gate charge and excellent CdV/dt effect decline. This MOSFET is an ideal choice for applications requiring fast switching performance and high reliability.

Product Attributes

  • Brand: HSL
  • Product Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 2.8 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 2.3 A
IDM Pulsed Drain Current2 12 A
PD@TA=25 Total Power Dissipation3 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 85 /W
RJC Thermal Resistance Junction-Case1 --- 48 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.054 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=2.5A --- 80 100 m
VGS=4.5V , ID=2A --- 85 110 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V
VGS(th)/TJ VGS(th) Temperature Coefficient --- -4.96 --- mV/
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- --- 1 uA
VDS=48V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=5V , ID=2A --- 13 --- S
Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=2A --- 5 7.0 nC
Qgs Gate-Source Charge --- 1.68 2.4 nC
Qgd Gate-Drain Charge --- 1.9 2.7 nC
td(on) Turn-On Delay Time VDS=30V , VGS=10V , RG=3.3, ID=2A --- 1.6 3.2 ns
tr Rise Time --- 7.2 13 ns
td(off) Turn-Off Delay Time --- 25 50 ns
tf Fall Time --- 14.4 28.8 ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 511 715 pF
Coss Output Capacitance --- 38 53 pF
Crss Reverse Transfer Capacitance --- 25 35 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2.8 A
ISM Pulsed Source Current2,4 --- --- 12 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
trr Reverse Recovery Time IF=2A , dI/dt=100A/s , TJ=25 --- 9.7 --- nS
Qrr Reverse Recovery Charge --- 5.8 --- nC

Notes:

  1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  3. The power dissipation is limited by 150 junction temperature.
  4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121455_HUASHUO-HSL6008_C508453.pdf
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