High cell density trench technology MOSFET HUASHUO HSBA6224 dual N channel 60V fast switching device
Key Attributes
Model Number:
HSBA6224
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
16mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
96pF@48V
Number:
2 N-Channel
Input Capacitance(Ciss):
2.427nF@48V
Pd - Power Dissipation:
3.6W
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
HSBA6224
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6224 is a dual N-channel 60V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA6224 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS @ 10V | 50 | A | ||||
| Continuous Drain Current (ID) @ TC=70, VGS @ 10V | 25 | A | ||||
| Pulsed Drain Current (IDM) | 150 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 64 | mJ | ||||
| Avalanche Current (IAS) | 25 | A | ||||
| Total Power Dissipation (PD) @ TA=25 | 3.6 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | --- | 25 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 2.8 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=12A | --- | 11 | 16 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | 15 | 20 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=15A | --- | 45 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | ||
| Total Gate Charge (Qg) (4.5V) | VDS=48V , VGS=4.5V , ID=15A | --- | 19 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 7.1 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 7.6 | --- | nC | ||
| Turn-On Delay Time (td(on)) | VDD=30V , VGS=10V , RG=3.3 ID=15A | --- | 7.3 | --- | ns | |
| Rise Time (tr) | --- | 50 | --- | ns | ||
| Turn-Off Delay Time (td(off)) | --- | 33 | --- | ns | ||
| Fall Time (tf) | --- | 7.6 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 2427 | --- | pF | |
| Output Capacitance (Coss) | --- | 165 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 96 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 35 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | --- | 16.1 | --- | nS | |
| Reverse Recovery Charge (Qrr) | --- | 11 | --- | nC |
2410121629_HUASHUO-HSBA6224_C5128207.pdf
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