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quality P Channel MOSFET HUASHUO HSU3031 30V Fast Switching Device with Low Gate Charge and High Reliability factory
quality P Channel MOSFET HUASHUO HSU3031 30V Fast Switching Device with Low Gate Charge and High Reliability factory

P Channel MOSFET HUASHUO HSU3031 30V Fast Switching Device with Low Gate Charge and High Reliability

Key Attributes
Model Number: HSU3031
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
140pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.45nF@25V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HSU3031
Package:
TO-252-2
Product Description

Product Overview

The HSU3031 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-semi
  • Product Type: P-Ch MOSFET
  • Voltage Rating: 30V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -70 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -50 A
IDM Pulsed Drain Current -200 A
EAS Single Pulse Avalanche Energy 80 mJ
IAS Avalanche Current -40 A
PD@TC=25 Total Power Dissipation 90 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
RJA Thermal Resistance Junction-ambient (Steady State) 50 /W
RJC Thermal Resistance Junction-case 1.6 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
RDS(ON),max Static Drain-Source On-Resistance VGS=-10V , ID=-20A 6 7.2 m
RDS(ON),max Static Drain-Source On-Resistance VGS=-4.5V , ID=-15A 9.5 12 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 -1 uA
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.2
Qg Total Gate Charge (-10V) VDS=-15V , VGS=-10V , ID=-18A 60 nC
Qgs Gate-Source Charge 9 nC
Qgd Gate-Drain Charge 15 nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-20A 17 ns
Tr Rise Time 40 ns
Td(off) Turn-Off Delay Time 55 ns
Tf Fall Time 13 ns
Ciss Input Capacitance VDS=-25V , VGS=0V , f=1MHz 3450 pF
Coss Output Capacitance 255 pF
Crss Reverse Transfer Capacitance 140 pF
IS Continuous Source Current VG=VD=0V , Force Current -70 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1.2 V
trr Reverse Recovery Time IF=-20A , di/dt=100A/s , TJ=25 22 nS
Qrr Reverse Recovery Charge 72 nC
Part Number Package Code Packaging
HSU3031 TO252-2 2500/Tape&Reel

2410121656_HUASHUO-HSU3031_C701014.pdf
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