N Channel MOSFET 650V Voltage Rating Featuring HUAKE SMF10N65 with Low Crss and Fast Switching Speed
Key Attributes
Model Number:
SMF10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V,5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.132nF@25V
Pd - Power Dissipation:
50W
Mfr. Part #:
SMF10N65
Package:
TO-220F
Product Description
Product Overview
The SMF10N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical RDS(on) of 0.80 at VGS=10V and a continuous drain current of 10.0A.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Model: SMF10N65
- Voltage Rating: 650V
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous | (TC=25C) | 10.0* | A | ||
| (TC=100C) | 6.0* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 40* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 713 | mJ | |||
| IAR | Avalanche Current (Note1) | 10.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 17.8 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25C) | 50 | W | ||
| -Derate above 25C | 0.4 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance,Junction to Case | 2.5 | C /W | |||
| RJA | Thermal Resistance,Junction to Ambient | 62.5 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.7 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | 1 | A | ||
| VDS=520V,TC=125C | 10 | A | ||||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=5.0A | 0.80 | 1.0 | ||
| gFS | Forward Transconductance | VDS=40 V, ID=5.0A (Note4) | 6.2 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 1132 | pF | ||
| Coss | Output Capacitance | 135 | pF | |||
| Crss | Reverse Transfer Capacitance | 20 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 10 A, RG = 25 (Note4,5) | 33 | ns | ||
| tr | Turn-On Rise Time | 60 | ns | |||
| td(off) | Turn-Off Delay Time | 59 | ns | |||
| tf | Turn-Off Fall Time | 39 | ns | |||
| Qg | Total Gate Charge | VDS = 520 V, ID =10 A, VGS = 10 V (Note4,5) | 19.4 | nC | ||
| Qgs | Gate-Source Charge | 6.26 | nC | |||
| Qgd | Gate-Drain Charge | 6.55 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 10 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 40 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=10.0A | 1.3 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=10.0A, d IF/dt=100A/s (Note4) | 425 | ns | ||
| Qrr | Reverse Recovery Charge | 4.31 | C | |||
2410122013_HUAKE-SMF10N65_C563586.pdf
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