20V dual N channel MOSFET HUASHUO HSW8205 featuring fast switching and performance for battery packs
Key Attributes
Model Number:
HSW8205
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@2.5V,3.4A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
148pF@8V
Number:
2 N-Channel
Input Capacitance(Ciss):
522pF@8V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
HSW8205
Package:
SOT-23-6
Product Description
Product Overview
The HSW8205 is a dual N-channel, 20V fast switching MOSFET designed with advanced high cell density Trench technology. It features low RDS(ON) and is particularly suitable for Lithium-ion battery pack applications. This product meets RoHS and Green Product requirements with full function reliability approval, offering benefits such as super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Model: HSW8205
- Type: Dual N-channel MOSFET
- Voltage Rating: 20V
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current | 4.6 | A | |||
| ID@TA=70 | Continuous Drain Current | 4.1 | A | |||
| IDM | Pulsed Drain Current | 22 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 100 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=4.3A | 24 | 28 | m | |
| VGS=2.5V , ID=3.4A | 30 | 38 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.6 | 0.9 | 1.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=3.5A | 21 | --- | S | |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=3A | 6.1 | --- | nC | |
| Qgs | Gate-Source Charge | 1.7 | --- | nC | ||
| Qgd | Gate-Drain Charge | 1.4 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=6 ID=1A | 10 | --- | ns | |
| Tr | Rise Time | 8.2 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 25 | --- | ns | ||
| Tf | Fall Time | 6 | --- | ns | ||
| Ciss | Input Capacitance | VDS=8V , VGS=0V , f=1MHz | 522 | --- | pF | |
| Coss | Output Capacitance | 124 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 148 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current, | VG=VD=0V , Force Current | --- | 4.6 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Notes:
The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
The data tested by pulsed, pulse width 300us, duty cycle 2%.
The power dissipation is limited by 150 junction temperature.
The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121531_HUASHUO-HSW8205_C518798.pdf
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