650V N Channel Super Junction MOSFET HUAKE HCF65R260 with Low RDSon and 100 Percent Avalanche Tested

Key Attributes
Model Number: HCF65R260
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
300mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.3pF
Number:
1 N-channel
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
750pF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
35.7nC@10V
Mfr. Part #:
HCF65R260
Package:
TO-220F
Product Description

Product Overview

The HCF65R260 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a low RDS(on) of 260m at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.

Product Attributes

  • Brand: HUAKE semiconductors
  • Product Series: HCF65R260
  • Channel Type: N-Channel
  • Technology: Super Junction Power MOSFET
  • Package: TO-220F
  • Certifications: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
VDSSDrain-Source Voltage650V
IDDrain Current - Continuous (Tc=25C)15.0*A
IDDrain Current - Continuous (Tc=100C)9.5*A
IDMDrain Current - Pulsed (Note1)60*A
VGSSGate-Source Voltage30V
EASSingle Pulsed Avalanche Energy (Limit Reference Value) (Note2)294mJ
IARAvalanche Current (Note1)7.5A
EARRepetitive Avalanche Energy (Note1)6.9mJ
dv/dtPeak Diode Recovery dv/dt (Note3)8.5V/ns
PDPower Dissipation(TC =25C)46W
Derate above 25C0.37W/C
TjOperating Junction Temperature150C
TstgStorage Temperature Range-55+150C
Thermal Characteristics
RJCThermal Resistance, Junction to Case2.72C/W
RJAThermal Resistance, Junction to Ambient80C/W
Electrical Characteristics (Tc=25C unless otherwise noted)
BVDSSDrain-source Breakdown VoltageVGS=0V ,ID=250A650V
BVDSS /TJBreakdown Voltage Temperature CoefficientID=250A (Referenced to 25C)0.68V/C
IDSSZero Gate Voltage Drain CurrentVDS=650V,VGS=0V1A
IDSSZero Gate Voltage Drain CurrentVDS=520V,Tc=125C10A
IGSSFGate-Body Leakage Current,ForwardVGS=+30V, VDS=0V100nA
IGSSRGate-Body Leakage Current,ReverseVGS=-30V, VDS=0V-100nA
VGS(th)Gate Threshold VoltageVDS= VGS, ID=250A2.04.0V
RDS(on)Static Drain-Source On-ResistanceVGS=10 V, ID=7.5A260300m
gFSForward TransconductanceVDS=20 V, ID=7.5A (Note4)9.6S
Dynamic Characteristics
CissInput CapacitanceVDS=25V,VGS=0V, f=1.0MHz750pF
CossOutput Capacitance280pF
CrssReverse Transfer Capacitance13.3pF
Switching Characteristics
td(on)Turn-On Delay TimeVDD = 325 V, ID =15.0 A, RG = 25 (Note4,5)12.5ns
trTurn-On Rise Time35.2ns
td(off)Turn-Off Delay Time52ns
tfTurn-Off Fall Time23.8ns
QgTotal Gate ChargeVDS = 520 V, ID =15.0 A, VGS = 10 V (Note4,5)35.7nC
QgsGate-Source Charge8.5nC
QgdGate-Drain Charge17.6nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current15.0A
ISMMaximum Pulsed Drain-Source Diode Forward Current60A
VSDDrain-Source Diode Forward VoltageVGS =0V,IS=15.0A1.4V
trrReverse Recovery TimeVGS =0V, IS=15.0A, d IF /dt=100A/s (Note4)468ns
QrrReverse Recovery Charge5.6C

2410121937_HUAKE-HCF65R260_C19725793.pdf

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