650V N Channel Super Junction MOSFET HUAKE HCF65R260 with Low RDSon and 100 Percent Avalanche Tested
Product Overview
The HCF65R260 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a low RDS(on) of 260m at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Series: HCF65R260
- Channel Type: N-Channel
- Technology: Super Junction Power MOSFET
- Package: TO-220F
- Certifications: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 15.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 9.5* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 60* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 294 | mJ | |||
| IAR | Avalanche Current (Note1) | 7.5 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 6.9 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 8.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 46 | W | |||
| Derate above 25C | 0.37 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.72 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.68 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=520V,Tc=125C | 10 | A | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=7.5A | 260 | 300 | m | |
| gFS | Forward Transconductance | VDS=20 V, ID=7.5A (Note4) | 9.6 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 750 | pF | ||
| Coss | Output Capacitance | 280 | pF | |||
| Crss | Reverse Transfer Capacitance | 13.3 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID =15.0 A, RG = 25 (Note4,5) | 12.5 | ns | ||
| tr | Turn-On Rise Time | 35.2 | ns | |||
| td(off) | Turn-Off Delay Time | 52 | ns | |||
| tf | Turn-Off Fall Time | 23.8 | ns | |||
| Qg | Total Gate Charge | VDS = 520 V, ID =15.0 A, VGS = 10 V (Note4,5) | 35.7 | nC | ||
| Qgs | Gate-Source Charge | 8.5 | nC | |||
| Qgd | Gate-Drain Charge | 17.6 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 15.0 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 60 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=15.0A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=15.0A, d IF /dt=100A/s (Note4) | 468 | ns | ||
| Qrr | Reverse Recovery Charge | 5.6 | C | |||
2410121937_HUAKE-HCF65R260_C19725793.pdf
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