Advanced Trench MOS Technology N Channel Fast Switching MOSFET HUASHUO HSBB6066 for Power Management
Key Attributes
Model Number:
HSBB6066
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
438pF
Input Capacitance(Ciss):
1.67nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
HSBB6066
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6066 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON) for enhanced efficiency. This MOSFET is 100% EAS guaranteed and available in a Green Device option. Its key applications include motor control, DC/DC converters, and synchronous rectifier circuits, providing reliable and efficient power management solutions.
Product Attributes
- Brand: HS
- Technology: Advanced Trench MOS
- Device Type: N-Channel Fast Switching MOSFET
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 60 | A | |||
| ID@TC=100 | Continuous Drain Current | 37 | A | |||
| IDM | Pulsed Drain Current | 130 | A | |||
| EAS | Single Pulse Avalanche Energy | 93 | mJ | |||
| IAS | Avalanche Current | 43 | A | |||
| PD@TC=25 | Total Power Dissipation | 45 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 2.8 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 4.4 | 5.2 | m | |
| VGS=4.5V , ID=10A | 6.4 | 7.8 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.65 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.3 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=20A | 33 | --- | nC | |
| Qgs | Gate-Source Charge | 18 | --- | nC | ||
| Qgd | Gate-Drain Charge | 6 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 6 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 29 | --- | ns | ||
| Tf | Fall Time | 7.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1670 | --- | pF | |
| Coss | Output Capacitance | 438 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 60 | A | |
| ISM | Pulsed Source Current | --- | 130 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 23 | nS | |
| Qrr | Reverse Recovery Charge | --- | 60 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB6066 | PRPAK3*3 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=43A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121653_HUASHUO-HSBB6066_C2828498.pdf
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