HUAKE SMT5N60 N Channel MOSFET designed for high frequency switching and low Crss in power electronics
Key Attributes
Model Number:
SMT5N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
568pF@25V
Pd - Power Dissipation:
35W
Mfr. Part #:
SMT5N60
Package:
TO-220F-3
Product Description
Product Overview
The SMT5N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for demanding power applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Model: SMT5N60
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current - Continuous | (TC=25⁰C) | 5.0* | A | ||
| (TC=100⁰C) | 3.1* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 20* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 245 | mJ | |||
| IAR | Avalanche Current (Note1) | 5.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 10.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25⁰C) | 35 | W | ||
| -Derate above 25⁰C | 0.27 | W/°C | ||||
| Tj | Operating Junction Temperature | 150 | °C | |||
| Tstg | Storage Temperature Range | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance,Junction to Case | 3.57 | °C /W | |||
| RθJA | Thermal Resistance,Junction to Ambient | 62.5 | °C /W | |||
| Electrical Characteristics (TC=25⁰C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 600 | -- | -- | V |
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25⁰C) | -- | 0.65 | -- | V/°C |
| IDSS | Zero Gate Voltage Drain Current | VDS=600V,VGS=0V | -- | -- | 1 | μA |
| VDS=480V,TC=125⁰C | -- | -- | 10 | μA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=2.5A | -- | 1.9 | 2.5 | Ω |
| gFS | Forward Transconductance | VDS=40 V, ID=2.0A (Note4) | -- | 3.6 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 568 | -- | pF |
| Coss | Output Capacitance | -- | 63 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 11 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 300 V, ID = 5.0 A, RG = 25 Ω (Note4,5) | -- | 31 | -- | ns |
| tr | Turn-On Rise Time | -- | 76 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 61 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 56 | -- | ns | |
| Qg | Total Gate Charge | VDS = 480 V, ID =5.0 A, VGS = 10 V (Note4,5) | -- | 13 | -- | nC |
| Qgs | Gate-Source Charge | -- | 4.1 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 4.9 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 5.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 20 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=4.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=4.0A, d IF /dt=100A/μs (Note4) | -- | 332 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.69 | -- | μC | |
2410122013_HUAKE-SMT5N60_C570141.pdf
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