High cell density trenched N channel MOSFET HUASHUO HSS3400A for small power switching applications
Key Attributes
Model Number:
HSS3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
61pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
614pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3.74nC@4.5V
Mfr. Part #:
HSS3400A
Package:
SOT-23
Product Description
Product Overview
The HSS3400A is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, featuring a green device option, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 5.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 4.5 | A | |||
| IDM | Pulsed Drain Current2 | 22 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.0 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient1 | 100 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.029 | V/ | ||
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=10V , ID=5.9A | 19 | 26 | m | |
| VGS=4.5V , ID=5A | 23 | 31 | ||||
| VGS=2.5V , ID=4A | 38 | 48 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.7 | 0.9 | 1.4 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -2.82 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=55 | 5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=3A | 19 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.5 | 3 | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | 3.74 | nC | ||
| Qgs | Gate-Source Charge | 0.62 | ||||
| Qgd | Gate-Drain Charge | 1.82 | ||||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=3.3 ID=3A | 6.5 | ns | ||
| tr | Rise Time | 2 | ||||
| td(off) | Turn-Off Delay Time | 28.6 | ||||
| tf | Fall Time | 2.6 | ||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 614 | pF | ||
| Coss | Output Capacitance | 78 | ||||
| Crss | Reverse Transfer Capacitance | 61 | ||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 5.5 | A | ||
| ISM | Pulsed Source Current2,4 | 22 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=3A , dI/dt=100A/s , TJ=25 | 6.8 | ns | ||
| Qrr | Reverse Recovery Charge | 2.3 | nC |
| Part Number | Package code | Packaging |
|---|---|---|
| HSS3400A | SOT-23 | 3000/Tape&Reel |
2410121531_HUASHUO-HSS3400A_C518774.pdf
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