High Current N Channel MOSFET HUASHUO HSBA3086 Designed for DC DC Converter and Desktop Computer Power Management
Key Attributes
Model Number:
HSBA3086
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
230A
RDS(on):
0.7mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
7.427nF@20V
Gate Charge(Qg):
65nC@4.5V
Mfr. Part #:
HSBA3086
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3086 is an N-Channel Fast Switching MOSFET designed for power management applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for DC/DC converters and power management in desktop computers. This MOSFET is 100% UIS tested and is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench Technology
- Compliance: RoHS and Halogen-Free Compliant
- Testing: 100% UIS Tested
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 230 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 147 | A | |||
| IDM | Pulsed Drain Current2 | 400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 420 | mJ | |||
| IAS | Avalanche Current | 41 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 89 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 0.7 | 0.9 | m | |
| VGS=4.5V , ID=20A | 1.0 | 1.4 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.4 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=20A | 65 | --- | nC | |
| Qgs | Gate-Source Charge | 20 | --- | nC | ||
| Qgd | Gate-Drain Charge | 28 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=1.5, ID=20A | 38 | --- | ns | |
| Tr | Rise Time | 22 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 115 | --- | ns | ||
| Tf | Fall Time | 150 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 7427 | --- | pF | |
| Coss | Output Capacitance | 2930 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 538 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 100 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Model | Package Code | Packaging |
|---|---|---|
| HSBA3086 | PRPAK5*6 | 3000/Tape&Reel |
2410121655_HUASHUO-HSBA3086_C5128204.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
