100V N Channel MOSFET HUAKE HST50N10 featuring low RDSon and fast switching for power supply design
Key Attributes
Model Number:
HST50N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 N-channel
Output Capacitance(Coss):
510pF
Input Capacitance(Ciss):
1.28nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
HST50N10
Package:
TO-220C
Product Description
Product Overview
The HST50N10 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with a low RDS(on) of 13m (Typ) at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: HST50N10
- Channel Type: N-Channel
- Voltage Rating: 100V
- Package: TO-220C
- Version: 1.0
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| ID | Drain Current - Continuous | (TC=25C) | 50* | A | ||
| (TC=100C) | 31.6* | A | ||||
| IDM | Drain Current - Pulsed | 200* | A | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note5) | 74 | mJ | |||
| PD | Power Dissipation | (TC =25C) | 90 | W | ||
| -Derate above 25C | 0.72 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case (Note2) | 1.39 | C /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | -- | 1 | A | |
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+20V, VDS=0V | -- | 100 | nA | |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-20V, VDS=0V | -- | -100 | nA | |
| On Characteristics (Note3) | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 1.2 | 1.7 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=25A | 13 | 17 | m | |
| VGS=6 V, ID=25A | 15 | 20 | m | |||
| Dynamic Characteristics (Note4) | ||||||
| Capacitance | Input Capacitance (Ciss) | VDS=25V,VGS=0V, f=1.0MHz | 1280 | -- | pF | |
| Output Capacitance (Coss) | 510 | -- | pF | |||
| Reverse Transfer Capacitance (Crss) | 43 | -- | pF | |||
| Switching Characteristics (Note4) | ||||||
| td(on) | Turn-On Delay Time | VDD = 50 V, ID =20 A, RG =3.05 , VGS=10V | 5.6 | -- | ns | |
| tr | Turn-On Rise Time | 29 | -- | ns | ||
| td(off) | Turn-Off Delay Time | 28 | -- | ns | ||
| tf | Turn-Off Fall Time | 9.9 | -- | ns | ||
| Gate Charge Characteristics (Note4) | ||||||
| Charge | Total Gate Charge (Qg) | VDS = 80 V, ID =20A, VGS = 10 V | 24 | -- | nC | |
| Gate-Source Charge (Qgs) | 5.3 | -- | nC | |||
| Gate-Drain Charge (Qgd) | 5.9 | -- | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current (Note2) | -- | 50 | A | ||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | 200 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=25A (Note3) | -- | 1.3 | V | |
| Diode Recovery | Reverse Recovery Time (trr) | VGS =0V, IS=20A, d IF /dt=100A/s (Note3) | -- | 41 | ns | |
| Reverse Recovery Charge (Qrr) | -- | 42 | nC | |||
2410121937_HUAKE-HST50N10_C19725819.pdf
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