86--136 6733 2386
quality High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge factory
quality High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge factory

High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge

Key Attributes
Model Number: HSM4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.5A
RDS(on):
20mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 P-Channel
Output Capacitance(Coss):
194pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.345nF
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSM4435
Package:
SOP-8
Product Description

Product Overview

The HSM4435 is a P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include 100% EAS guaranteed, Green Device availability, super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -9.5 A
ID@TA=70 Continuous Drain Current, VGS @ -10V1 -7.6 A
IDM Pulsed Drain Current2 -50 A
EAS Single Pulse Avalanche Energy3 72.2 mJ
IAS Avalanche Current -38 A
PD@TA=25 Total Power Dissipation4 3.1 W
PD@TA=70 Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 75 /W
RJA Thermal Resistance Junction-Ambient1(t10s) 40 /W
RJC Thermal Resistance Junction-Case1 24 /W
VDS -30 V
RDS(ON),typ 18 m
ID -9.5 A
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.022 V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-6A 18 20 m
VGS=-4.5V , ID=-4A 27 32 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -2.5 V
VGS(th) VGS(th) Temperature Coefficient 4.6 mV/
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 -1 uA
VDS=-24V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-6A 17 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 13
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-6A 12.6 nC
Qgs Gate-Source Charge 4.8
Qgd Gate-Drain Charge 4.8
td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-6A 4.6 ns
tr Rise Time 14.8 ns
td(off) Turn-Off Delay Time 41 ns
tf Fall Time 19.6 ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 1345 pF
Coss Output Capacitance 194 pF
Crss Reverse Transfer Capacitance 158 pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current -9.5 A
ISM Pulsed Source Current2,5 -50 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1.2 V
trr Reverse Recovery Time IF=-6A , dI/dt=100A/s , TJ=25 16.3 nS
Qrr Reverse Recovery Charge 5.9 nC
Ordering Information
Part Number Package code Packaging
HSM4435 SOP-8 4000/Tape&Reel

Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
3 The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-38A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410121455_HUASHUO-HSM4435_C2908112.pdf
Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification factory
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.