Low On Resistance Dual N Channel MOSFET HYG090ND06LS1C2 with High Current Capability and Reliability
Key Attributes
Model Number:
HYG090ND06LS1C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
56A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
2 N-Channel
Output Capacitance(Coss):
505pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
926pF
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
HYG090ND06LS1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG090ND06LS1C2 is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 8.0 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
- Package: PDFN8L(5x6)
Technical Specifications
| Parameter | Conditions | Value | Unit |
| Drain-Source Voltage (VDSS) | VGS=0V | 60 | V |
| Gate-Source Voltage (VGSS) | 20 | V | |
| Junction Temperature Range (TJ) | -55 to 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | 56 | A |
| Pulsed Drain Current (IDM) | Tc=25C | 220 | A |
| Continuous Drain Current (ID) | Tc=25C | 56 | A |
| Continuous Drain Current (ID) | Tc=70C | 39.5 | A |
| Maximum Power Dissipation (PD) | Tc=25C | 60 | W |
| Maximum Power Dissipation (PD) | Tc=70C | 30 | W |
| Thermal Resistance, Junction-to-Case (RJC) | 2.5 | C/W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | 50 | C/W | |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH, Starting TJ=25C, VGS=10V | 83 | mJ |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 60 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=60V, VGS=0V | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.9 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=20A | 8.0 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V, IDS=20A | 12.2 | m |
| Diode Forward Voltage (VSD) | ISD=20A, VGS=0V | 0.87 | V |
| Reverse Recovery Time (trr) | ISD=20A, dISD/dt=100A/s | 22.9 | ns |
| Reverse Recovery Charge (Qrr) | 15 | nC | |
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | 2.1 | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 926 | pF |
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 505 | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 39 | pF |
| Turn-on Delay Time (td(ON)) | VDD=30V, RG=4, IDS=20A, VGS=10V | 7.7 | ns |
| Turn-on Rise Time (Tr) | VDD=30V, RG=4, IDS=20A, VGS=10V | 31.7 | ns |
| Turn-off Delay Time (td(OFF)) | VDD=30V, RG=4, IDS=20A, VGS=10V | 18.4 | ns |
| Turn-off Fall Time (Tf) | VDD=30V, RG=4, IDS=20A, VGS=10V | 34.8 | ns |
| Total Gate Charge (Qg) | VDS=48V, VGS=10V, ID=20A | 18.5 | nC |
| Total Gate Charge (Qg) | VDS=48V, VGS=4.5V, ID=20A | 9.4 | nC |
| Gate-Source Charge (Qgs) | VDS=48V, VGS=10V, ID=20A | 3.9 | nC |
| Gate-Drain Charge (Qgd) | VDS=48V, VGS=10V, ID=20A | 4.8 | nC |
2410121317_HUAYI-HYG090ND06LS1C2_C2999758.pdf
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