Power Management MOSFET HUAYI HYG120P06LR1D P Channel Device with 55 Ampere Current Rating and RoHS
Key Attributes
Model Number:
HYG120P06LR1D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
195pF
Number:
1 P-Channel
Output Capacitance(Coss):
285pF
Input Capacitance(Ciss):
4.882nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
91.5nC@10V
Mfr. Part #:
HYG120P06LR1D
Package:
TO-252
Product Description
HYG120P06LR1D/U/V P-Channel MOSFET
The HYG120P06LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers a robust and reliable solution with key features including a -60V/-55A rating, low on-resistance (RDS(ON) = 12.5m typ. @ VGS = -10V), and 100% avalanche testing. This device is suitable for DC/DC converters, load switching, and motor control applications. Halogen-free and Green (RoHS compliant) options are available.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish.
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Common Ratings (Tc=25C Unless Otherwise Noted) | -60 | V | ||
| Gate-Source Voltage (VGSS) | Common Ratings (Tc=25C Unless Otherwise Noted) | 20 | V | ||
| Maximum Junction Temperature (TJ) | Common Ratings (Tc=25C Unless Otherwise Noted) | 175 | C | ||
| Storage Temperature Range (TSTG) | Common Ratings (Tc=25C Unless Otherwise Noted) | -55 | 175 | C | |
| Drain Current-Continuous (ID) | Tc=25C | -55 | A | ||
| Drain Current-Continuous (ID) | Tc=100C | -39 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C * | -210 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 75 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 37.5 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 2.0 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | ** | 110 | C/W | ||
| Single Pulsed Avalanche Energy (EAS) | *** | 343 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=-250uA | -60 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=-60V, VGS=0V | -1 | uA | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | -50 | uA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250uA | -1.0 | -1.8 | -3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-10V, ID=-20A * | 12.5 | 16 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-4.5V, ID=-20A * | 18 | 22 | m | |
| Diode Forward Voltage (VSD) | ISD=-20A, VGS=0V * | -0.85 | -1.2 | V | |
| Reverse Recovery Time (trr) | ISD=-20A, dI/dt=100A/us | 19.8 | ns | ||
| Reverse Recovery Charge (Qrr) | 16.3 | nC | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4882 | pF | ||
| Output Capacitance (Coss) | 285 | pF | |||
| Reverse Transfer Capacitance (Crss) | 195 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=-48V, RG=4, IDS=-20A, VGS=-10V | 12.7 | ns | ||
| Turn-on Rise Time (tr) | 52.8 | ns | |||
| Turn-off Delay Time (td(OFF)) | 164.7 | ns | |||
| Turn-off Fall Time (tf) | 108.5 | ns | |||
| Total Gate Charge (Qg(10V)) | VDS = -48V, VGS= -10V, ID= -20A | 91.5 | nC | ||
| Total Gate Charge (Qg(4.5V)) | 46.3 | nC | |||
| Gate-Source Charge (Qgs) | 21 | nC | |||
| Gate-Drain Charge (Qgd) | 20.1 | nC | |||
2409302203_HUAYI-HYG120P06LR1D_C2844410.pdf
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