HUAKE SMF13N50 N Channel MOSFET designed for high current switching and power supply applications
Key Attributes
Model Number:
SMF13N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
380mΩ@10V,6.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2nF@25V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SMF13N50
Package:
TO-220F
Product Description
Product Overview
The SMF13N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features high current capability (13.0A continuous), low on-resistance (RDS(on) Typ = 380m at VGS=10V), low gate charge, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested and is ideal for use in High Frequency Switching Mode Power Supplies and Active Power Factor Correction circuits.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF13N50
- Channel Type: N-Channel
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 500 | V | |||
| ID | Drain Current - Continuous | (Tc=25°C) | 13.0* | A | ||
| (Tc=100°C) | 8.2* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 52* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 744 | mJ | |||
| IAR | Avalanche Current (Note1) | 13.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 19.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25°C) | 50 | W | ||
| -Derate above 25°C | 0.4 | W/°C | ||||
| Tj | Operating Junction Temperature | 150 | °C | |||
| Tstg | Storage Temperature Range | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 2.50 | °C /W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 62.5 | °C /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 500 | -- | -- | V |
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25°C) | -- | 0.55 | -- | V/°C |
| IDSS | Zero Gate Voltage Drain Current | VDS=500V,VGS=0V | -- | -- | 1 | μA |
| VDS=400V,Tc=125°C | -- | -- | 10 | μA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=6.5A | -- | 380 | 500 | mΩ |
| gFS | Forward Transconductance | VDS=20 V, ID=6.5A (Note4) | -- | 11 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 2000 | -- | pF |
| Coss | Output Capacitance | -- | 190 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 9.5 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250 V, ID = 13 A, RG = 25 Ω (Note4,5) | -- | 85 | -- | ns |
| tr | Turn-On Rise Time | -- | 152 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 145 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 56 | -- | ns | |
| Qg | Total Gate Charge | VDS = 400 V, ID =13 A, VGS = 10 V (Note4,5) | -- | 35 | -- | nC |
| Qgs | Gate-Source Charge | -- | 10.1 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 16.7 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 13 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 52 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=13 A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=13 A, d IF /dt=100A/μs (Note4) | -- | 402 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 4.3 | -- | μC | |
2312251801_HUAKE-SMF13N50_C19725788.pdf
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