600V N Channel MOSFET HUAKE SMF8N60 optimized for switching mode power supplies and power factor correction
Key Attributes
Model Number:
SMF8N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
16pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.4nF@25V
Pd - Power Dissipation:
51W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SMF8N60
Package:
TO-220F-3
Product Description
Product Overview
The SMF8N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Model: SMF8N60
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current - Continuous (Tc=25°C) | 8.0* | A | |||
| ID | Drain Current - Continuous (Tc=100°C) | 5.1* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 32* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 600 | mJ | |||
| IAR | Avalanche Current (Note1) | 8.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 15.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25°C) | 51 | W | |||
| PD | Derate above 25°C | 0.41 | W/°C | |||
| Tj | Operating Junction Temperature | 150 | °C | |||
| Tstg | Storage Temperature Range | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance,Junction to Case | 2.44 | °C /W | |||
| RθJA | Thermal Resistance,Junction to Ambient | 62.5 | °C /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 600 | V | ||
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25°C) | 0.7 | V/°C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=600V,VGS=0V | 1 | μA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=480V,TC=125°C | 10 | μA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=4.0A | 1.0 | 1.2 | Ω | |
| gFS | Forward Transconductance | VDS=40 V, ID=4.0A (Note4) | 7 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 1400 | pF | ||
| Coss | Output Capacitance | 175 | pF | |||
| Crss | Reverse Transfer Capacitance | 16 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 300 V, ID = 8.0 A, RG = 25 Ω (Note4,5) | 13.5 | ns | ||
| tr | Turn-On Rise Time | 105 | ns | |||
| td(off) | Turn-Off Delay Time | 128 | ns | |||
| tf | Turn-Off Fall Time | 49 | ns | |||
| Qg | Total Gate Charge | VDS = 480 V, ID =8.0 A, VGS = 10 V (Note4,5) | 31 | nC | ||
| Qgs | Gate-Source Charge | 6.5 | nC | |||
| Qgd | Gate-Drain Charge | 14.7 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 8.0 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 32 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=8.0A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=8.0A, d IF/dt=100A/μs (Note4) | 325 | ns | ||
| Qrr | Reverse Recovery Charge | 2.7 | μC | |||
2411220228_HUAKE-SMF8N60_C570138.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
