N Channel MOSFET HUAKE SMF4N65 650V designed for switching and power factor correction in power supply systems
Key Attributes
Model Number:
SMF4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
10pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
560pF@25V
Pd - Power Dissipation:
33W
Mfr. Part #:
SMF4N65
Package:
TO-220F-3
Product Description
Product Overview
The SMF4N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF4N65
- Revision: B/0
- Date: 2017.08
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | 650 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 4.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 2.5* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 16* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Note2) | EAS | 240 | mJ | |||
| Avalanche Current (Note1) | IAR | 4.0 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 10.0 | mJ | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation (TC =25C) | PD | 33 | W | |||
| Derate above 25C | 0.26 | W/C | ||||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Resistance, Junction to Case | RJC | 3.79 | C /W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C /W | |||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 650 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | 0.65 | V/C | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=520V,Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=2.0A | 2.2 | 2.6 | ||
| Forward Transconductance | gFS | VDS=40 V, ID=2.0A (Note4) | 3.6 | S | ||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | 560 | pF | ||
| Output Capacitance | Coss | 62 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Turn-On Delay Time | td(on) | VDD = 325 V, ID = 4.0 A, RG = 25 (Note4,5) | 30 | ns | ||
| Turn-On Rise Time | tr | 75 | ns | |||
| Turn-Off Delay Time | td(off) | 60 | ns | |||
| Turn-Off Fall Time | tf | 55 | ns | |||
| Total Gate Charge | Qg | VDS = 520 V, ID =4.0 A, VGS = 10 V (Note4,5) | 12 | nC | ||
| Gate-Source Charge | Qgs | 4.0 | nC | |||
| Gate-Drain Charge | Qgd | 4.8 | nC | |||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.0 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=4.0A | 1.4 | V | ||
| Reverse Recovery Time | trr | VGS =0V, IS=4.0A, d IF /dt=100A/s (Note4) | 330 | ns | ||
| Reverse Recovery Charge | Qrr | 2.67 | C |
2410122013_HUAKE-SMF4N65_C563582.pdf
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