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quality Power MOSFET HUASHUO HSU6117 P Channel 60V with Low Gate Charge and Full Function Reliability Approval factory
quality Power MOSFET HUASHUO HSU6117 P Channel 60V with Low Gate Charge and Full Function Reliability Approval factory

Power MOSFET HUASHUO HSU6117 P Channel 60V with Low Gate Charge and Full Function Reliability Approval

Key Attributes
Model Number: HSU6117
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
241pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.635nF@30V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSU6117
Package:
TO-252-2
Product Description

Product Overview

The HSU6117 is a P-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, -VGS @ -10V1 -60 A
ID@TC=100 Continuous Drain Current, -VGS @ -10V1 -35 A
IDM Pulsed Drain Current2 -170 A
EAS Single Pulse Avalanche Energy3 330 mJ
IAS Avalanche Current 40 A
PD@TC=25 Total Power Dissipation4 90 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 1.4 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-18A --- 14 m
VGS=-4.5V , ID=-12A --- 17
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
ΔVGS(th) VGS(th) Temperature Coefficient 4.28 --- mV/
IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25 --- 1 uA
VDS=-48V , VGS=0V , TJ=55 --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=-10V , ID=-18A 43 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 2.6 ---
Qg Total Gate Charge VDS=-30V , VGS=-10V , ID=-12A 85 --- nC
Qgs Gate-Source Charge 11 ---
Qgd Gate-Drain Charge 30 ---
td(on) Turn-On Delay Time VDD=-30V , VGS=-10V , RG=6, ID=-1A 18 --- ns
tr Rise Time 12 ---
td(off) Turn-Off Delay Time 100 ---
tf Fall Time 68 ---
Ciss Input Capacitance VDS=-30V , VGS=0V , f=1MHz 4635 --- pF
Coss Output Capacitance 524 ---
Crss Reverse Transfer Capacitance 241 ---
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -40 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1.2 V
Ordering Information
Part Number Package code Packaging
HSU6117 TO252-2 2500/Tape&Reel

Notes:

  • 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
  • 3. The EAS data shows Max. rating. The test condition is VDD=-30V, VGS=-10V, L=0.5mH, IAS=-40A.
  • 4. The power dissipation is limited by 150 junction temperature.
  • 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121630_HUASHUO-HSU6117_C5341699.pdf
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